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CDC421250RGER

Texas Instruments

CDC421250RGER by Texas Instruments

CDC421250RGER clock generator by Texas Instruments operates at a max output frequency of 250 MHz with a supply voltage range of 3V to 3.6V. This CMOS technology chip carrier is suitable for industrial applications requiring precise timing and clock generation in compact spaces, featuring a quad terminal position and nickel palladium gold finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,557 parts In-Stock

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Digiode

USA . 4,049 parts In-Stock

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Native Components

USA . 269 parts In-Stock

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$6.338

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AZTECH Wire

Italy . 523 parts In-Stock

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$19.563

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One Stop Electronics

USA . 132 parts In-Stock

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$21.000

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Ampacity Inc.

Singapore . 298 parts In-Stock

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$35.000

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Parana Technologies

USA . 2,207 parts In-Stock

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$41.271

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DigiPath Technology Company

USA . 2,007 parts In-Stock

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$45.445

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ChromeModa Solutions

Germany . 4,933 parts In-Stock

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$46.372

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$38.025

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IDEA Electronic Components Group

UK . 661 parts In-Stock

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$46.372

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$44.053

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$41.735

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Corohmni

South Africa . 100 parts In-Stock

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Component Stockers USA

USA . 224 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

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Microchip USA

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Kepictronics

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Northwest PG Solutions

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Overview

Enhance your projects with the CDC421250RGER clock generator by Texas Instruments. Crafted with precision and expertise, this innovative product offers a wide range of applications in various industries. From telecommunications to consumer electronics, this clock generator provides reliable performance and exceptional versatility. Say goodbye to compatibility issues and hello to seamless integration with the Texas Instruments CDC421250RGER.Upgrade your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the clock generator easy to handle and suitable for various applications.

Maximum Output Clock Frequency: 250 MHz

With a high maximum output clock frequency, this clock generator can handle demanding tasks and provide precise timing for sensitive applications.

Minimum Operating Temperature: -40 °C

The clock generator can function efficiently even in low-temperature environments, ensuring reliability in extreme conditions.

Technology: CMOS

Being based on CMOS technology, this clock generator offers low power consumption, high noise immunity, and compatibility with a wide range of devices.

Nominal Primary Clock/Crystal Frequency: 31.25 MHz

This clock generator provides a stable frequency reference, enabling precise timekeeping and synchronization in various electronic systems.

Technical Specifications

Clock Generators CDC421250RGER attributes and parameters. Explore more Clock Generators devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N24

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Clock Frequency:

250 MHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Nominal Primary Clock/Crystal Frequency:

31.25 MHz

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Clock Generators

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Peripheral IC Type:

Trade Compliance

CDC421250RGER Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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