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CD74HC08QM96G4Q1

Texas Instruments

CD74HC08QM96G4Q1 by Texas Instruments

CD74HC08QM96G4Q1 by Texas Instruments is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 27 ns propagation delay. It operates at a supply voltage range of 2-6V and is AEC-Q100 qualified for automotive applications. The package style is small outline with dual-position gull wing terminals, suitable for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,604 parts In-Stock

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Digiode

USA . 2,904 parts In-Stock

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2,904

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Northwest PG Solutions

USA . 1,088 parts In-Stock

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$3.069

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1,088

$3.069

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AZTECH Wire

Italy . 238 parts In-Stock

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$9.508

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238

$9.508

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Parana Technologies

USA . 2,134 parts In-Stock

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$14.647

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$1,360.171

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$13.182

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2,134

$14.647

$1,360.171

$13.182

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DigiPath Technology Company

USA . 1,883 parts In-Stock

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$16.128

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$14.838

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1,883

$16.128

$14.838

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ChromeModa Solutions

Germany . 2,132 parts In-Stock

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$16.457

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$13.495

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2,132

$16.457

$13.495

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IDEA Electronic Components Group

UK . 751 parts In-Stock

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$16.457

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$15.634

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$14.811

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751

$16.457

$15.634

$14.811

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One Stop Electronics

USA . 605 parts In-Stock

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$58.000

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605

$58.000

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Corphita

USA . 4,069 parts In-Stock

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4,069

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Microchip USA

USA . 2,540 parts In-Stock

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Native Components

USA . 145 parts In-Stock

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$2.706

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145

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$2.706

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Overview

Enhance your automotive electronics with the Texas Instruments CD74HC08QM96G4Q1 Logic Gates. With a commitment to quality and reliability, Texas Instruments offers a high-performance solution for your applications. This versatile product boasts a fast propagation delay and low power consumption, making it ideal for a wide range of automotive systems. Trust Texas Instruments to deliver exceptional value and benefits to meet your design needs. Experience the difference with Texas Instruments today!

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 27 ns

Low propagation delay allows for quick signal processing, making this product suitable for high-speed applications.

No. of Functions: 4

Having multiple functions in one package saves space on the circuit board and simplifies design.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with many existing systems.

Power Supplies (V): 2/6

Can accept a wide range of power supply voltages, providing flexibility in different operating conditions.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, suitable for automotive and industrial applications.

Technical Specifications

Logic Gates CD74HC08QM96G4Q1 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

27 ns

Propagation Delay (tpd):

135 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

CD74HC08QM96G4Q1 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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