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CD4572UBPW

Texas Instruments

CD4572UBPW by Texas Instruments

CD4572UBPW by Texas Instruments is a logic gate with 4 functions, 200 ns propagation delay at 5V. It operates in temperatures ranging from -55 to 125 °C and has a package style of small outline, thin profile. Ideal for military-grade applications requiring fast signal processing.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,276 parts In-Stock

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Digiode

USA . 3,840 parts In-Stock

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3,840

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Distributors (Availability)

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Native Components

USA . 296 parts In-Stock

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$0.299

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$0.287

296

$0.299

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$0.287

Northwest PG Solutions

USA . 472 parts In-Stock

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$0.329

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$0.290

472

$0.329

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$0.290

AZTECH Wire

Italy . 672 parts In-Stock

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$6.852

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672

$6.852

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Parana Technologies

USA . 557 parts In-Stock

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$24.683

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$25.351

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557

$24.683

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ChromeModa Solutions

Germany . 1,515 parts In-Stock

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$27.734

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$22.742

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$27.734

$22.742

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IDEA Electronic Components Group

UK . 553 parts In-Stock

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$27.734

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$26.347

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$24.961

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553

$27.734

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$24.961

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One Stop Electronics

USA . 1,229 parts In-Stock

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$43.000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Corphita

USA . 2,458 parts In-Stock

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DigiPath Technology Company

USA . 1,773 parts In-Stock

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$25.005

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Microchip USA

USA . 222 parts In-Stock

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Overview

Experience top-notch quality and performance with the CD4572UBPW by Texas Instruments, a leading manufacturer in the industry. This logic gate offers unparalleled reliability and precision, making it ideal for a wide range of applications. From industrial automation to consumer electronics, this versatile product delivers exceptional value and efficiency. Trust in Texas Instruments to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the CD4572UBPW and experience the advantages firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to damage.

Propagation Delay At Nominal Supply: 200 ns

The low propagation delay ensures fast and efficient processing of signals.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable supply voltage for compatibility with various systems.

Load Capacitance (CL): 50 pF

Optimized for driving typical loads in logic gate applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures without performance degradation, suitable for industrial environments.

Technology: CMOS

Uses CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates CD4572UBPW attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

MIXED WITH ONE 2-INPUT NOR & ONE 2-INPUT NAND GATE

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G16

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

4

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

200 ns

Propagation Delay (tpd):

200 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

CD4572UBPW Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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