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CD4077BPWRE4

Texas Instruments

CD4077BPWRE4 by Texas Instruments

CD4077BPWRE4 by Texas Instruments is a CMOS Logic Gates IC with 4 functions and 2 inputs. It has a propagation delay of 280 ns at 5V, suitable for military-grade applications. This surface-mount device comes in a small outline package with a thin profile and shrink pitch design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,358 parts In-Stock

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Digiode

USA . 2,960 parts In-Stock

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2,960

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Distributors (Availability)

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AZTECH Wire

Italy . 194 parts In-Stock

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$9.895

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194

$9.895

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Native Components

USA . 465 parts In-Stock

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$13.740

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Northwest PG Solutions

USA . 1,342 parts In-Stock

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$15.114

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$13.603

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One Stop Electronics

USA . 1,428 parts In-Stock

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$22.000

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$22.000

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Parana Technologies

USA . 1,966 parts In-Stock

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$26.510

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$27.090

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1,966

$26.510

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$27.090

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ChromeModa Solutions

Germany . 3,099 parts In-Stock

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$29.787

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$24.425

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$29.787

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IDEA Electronic Components Group

UK . 910 parts In-Stock

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$29.787

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$28.298

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$26.808

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910

$29.787

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Component Stockers USA

USA . 586 parts In-Stock

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$99.990

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Corphita

USA . 4,843 parts In-Stock

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Microchip USA

USA . 4,157 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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DigiPath Technology Company

USA . 1,134 parts In-Stock

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$26.856

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Overview

Looking for reliable and high-quality logic gates? Look no further than the CD4077BPWRE4 by Texas Instruments. With a strong reputation for excellence in manufacturing, Texas Instruments delivers top-notch products that meet the needs of various applications. Whether you are working on industrial automation, consumer electronics, or telecommunications, this logic gate offers unmatched value, benefits, and advantages. Trust Texas Instruments to provide you with the quality and reliability you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Propagation Delay At Nominal Supply: 280 ns

The low propagation delay ensures fast signal processing, making the product suitable for high-speed applications.

Surface Mount: YES

The surface mount feature allows for easy and compact integration onto PCBs, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

The standard 5V supply voltage is commonly used in electronics, making the product compatible with various systems.

Temperature Grade: MILITARY

The military-grade temperature range of -55°C to 125°C ensures reliable operation in harsh environments, making it suitable for aerospace or defense applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable for digital logic operations.

Technical Specifications

Logic Gates CD4077BPWRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

280 ns

Propagation Delay (tpd):

280 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

CD4077BPWRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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