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BC179

Texas Instruments

BC179 by Texas Instruments

BC179 by Texas Instruments is a PNP transistor with max power dissipation of 0.6W, hFE of 180, and fT of 200MHz. Ideal for low-power applications in electronics due to its single configuration and max collector current of 0.2A at up to 175°C operating temperature.

Median Price

$0.295

Lifecycle Status

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Digiode

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Vyrian

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Anansix

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Holdelec - ElecDif-Pro

France . 1,494 parts In-Stock

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Rapid Electronics

USA . 992 parts In-Stock

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Halfin

Belgium . 940 parts In-Stock

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ComSIT Distribution GmbH

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PUI

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ECAB

Sweden . 203 parts In-Stock

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ABC Electronics Ltd.

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Huijzer Components

Netherlands . 150 parts In-Stock

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GES GmbH

Germany . 145 parts In-Stock

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Donberg Electronics Ltd

Ireland . 85 parts In-Stock

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LittleDiode

UK . 71 parts In-Stock

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Manotoh

Italy . 17 parts In-Stock

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ICP Electronique

France . 12 parts In-Stock

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Euro-Tech

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Corohmni

South Africa . 379 parts In-Stock

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ChromeModa Solutions

Germany . 2,891 parts In-Stock

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$0.992

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$0.813

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IDEA Electronic Components Group

UK . 1,978 parts In-Stock

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$1.006

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DigiPath Technology Company

USA . 1,691 parts In-Stock

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MKK Technologies

India . 16 parts In-Stock

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Modulus Dynamics

Lithuania . 13,994 parts In-Stock

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$3.241

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AZTECH Wire

Italy . 812 parts In-Stock

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One Stop Electronics

USA . 1,768 parts In-Stock

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Northwest PG Solutions

USA . 4,958 parts In-Stock

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Corphita

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Problanco Electronics

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TANS Electronics

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SupplyDigital Components

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Kepictronics

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Kulean Microsystems

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Native Components

USA . 2,595 parts In-Stock

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Parana Technologies

USA . 2,111 parts In-Stock

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Assy Fe

Spain . 1,526 parts In-Stock

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UHIMA Technologies

Türkiye . 759 parts In-Stock

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Infinite Electronics LLP (Excess)

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UNI Independent Distributors

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Overview

Unleash the power of innovation with the BC179 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products that exceed expectations. The BC179, categorized under Other Function Transistors, offers reliability and performance like no other. Its PNP polarity and single configuration make it versatile for various applications. With a maximum collector current of 0.2 A and a minimum DC current gain of 180, this transistor is sure to meet your needs. Experience the value and benefits that the BC179 brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors can handle current flowing from collector to emitter, making them suitable for many applications.

Configuration: SINGLE

Single configuration makes it easier to integrate this transistor into various circuits and designs.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this transistor can handle moderate power requirements in applications.

Minimum DC Current Gain (hFE): 180

A minimum DC current gain of 180 ensures amplified output signals, making this transistor effective in signal processing applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high temperatures, increasing its reliability in various environments.

Maximum Collector Current (IC): 0.2 A

A maximum collector current of 0.2A allows this transistor to handle moderate current flow, suitable for many electronic circuits.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor can switch signals at high frequencies, making it ideal for RF applications.

Technical Specifications

Other Function Transistors BC179 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

180

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BC179 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-12-154-1803, 5961121541803, 5961-99-775-0844, 5961997750844, 5961-66-040-3049, 5961660403049, 6635-15-103-3019, 6635151033019

NIIN

121541803, 997750844, 660403049, 151033019

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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