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BC175

Texas Instruments

BC175 by Texas Instruments

BC175 by Texas Instruments is an NPN transistor with a max collector current of 0.5A and a nominal transition frequency of 180MHz. With a max power dissipation of 0.56W, it is ideal for applications requiring high-speed switching such as amplification circuits in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,620 parts In-Stock

1+ parts

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7,620

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Digiode

USA . 4,601 parts In-Stock

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4,601

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Anansix

USA . 2,019 parts In-Stock

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2,019

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,097 parts In-Stock

1+ parts

$1.332

100+ parts

-

1k+ parts

$2.067

10k+ parts

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1,097

$1.332

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$2.067

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DigiPath Technology Company

USA . 2,141 parts In-Stock

1+ parts

$1.467

100+ parts

$1.350

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-

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2,141

$1.467

$1.350

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ChromeModa Solutions

Germany . 4,670 parts In-Stock

1+ parts

$1.497

100+ parts

$1.228

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-

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4,670

$1.497

$1.228

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IDEA Electronic Components Group

UK . 755 parts In-Stock

1+ parts

$1.497

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$1.347

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755

$1.497

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$1.347

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Native Components

USA . 600 parts In-Stock

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$5.712

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600

$5.712

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AZTECH Wire

Italy . 399 parts In-Stock

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$15.690

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399

$15.690

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One Stop Electronics

USA . 1,468 parts In-Stock

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$32.050

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1,468

$32.050

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Corphita

USA . 4,388 parts In-Stock

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4,388

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Northwest PG Solutions

USA . 1,846 parts In-Stock

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$5.598

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1,846

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$5.598

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Overview

Upgrade your electronic projects with the high-quality BC175 transistor from Texas Instruments. This NPN transistor offers reliable performance and durability, making it ideal for a wide range of applications. Whether you're working on amplifiers, signal processing circuits, or voltage regulators, the BC175 provides the power and efficiency you need. Trust in Texas Instruments' reputation for excellence and invest in the BC175 for superior results in your next project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching circuits, making this product versatile and compatible with a variety of applications.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuit designs, making this product user-friendly for even those with limited experience in electronics.

Maximum Power Dissipation (Abs): 0.56 W

High power dissipation rating ensures that the transistor can handle moderate power levels without overheating, making it suitable for a range of applications where power efficiency is important.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, providing reliability and longevity in challenging operating environments.

Maximum Collector Current (IC): 0.5 A

The high collector current rating allows this transistor to handle higher current loads, making it suitable for circuits that require higher current levels for proper functionality.

Nominal Transition Frequency (fT): 180 MHz

A high transition frequency of 180 MHz indicates that this transistor can operate at high speeds, making it ideal for applications that require fast switching and signal processing.

Technical Specifications

Other Function Transistors BC175 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BC175 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5930-00-539-7129, 5930005397129

NIIN

005397129

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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