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BC178

Texas Instruments

BC178 by Texas Instruments

BC178 by Texas Instruments is a PNP transistor with max power dissipation of 0.6W, min DC current gain of 120, and max operating temp of 175°C. It is used in applications requiring a single configuration such as amplifiers or signal processing circuits due to its high transition frequency of 200MHz.

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Digiode

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Vyrian

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ECAB

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Holdelec - ElecDif-Pro

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LittleDiode

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ABC Electronics Ltd.

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Corel Iberica Componentes, S.L.

Spain . 70 parts In-Stock

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LWI Electronics Inc

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Halfin

Belgium . 55 parts In-Stock

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Amar Radio Corporation

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Donberg Electronics Ltd

Ireland . 15 parts In-Stock

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Goldney Electronics S.L.

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GES GmbH

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Modulus Dynamics

Lithuania . 20,318 parts In-Stock

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IDEA Electronic Components Group

UK . 3,779 parts In-Stock

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DigiPath Technology Company

USA . 4,184 parts In-Stock

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MKK Technologies

India . 2,078 parts In-Stock

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ChromeModa Solutions

Germany . 1,629 parts In-Stock

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AZTECH Wire

Italy . 418 parts In-Stock

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One Stop Electronics

USA . 1,785 parts In-Stock

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Corphita

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Problanco Electronics

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Northwest PG Solutions

USA . 6,190 parts In-Stock

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Parana Technologies

USA . 4,377 parts In-Stock

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TANS Electronics

Latvia . 4,178 parts In-Stock

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Native Components

USA . 3,066 parts In-Stock

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Türkiye . 759 parts In-Stock

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Corohmni

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Kulean Microsystems

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Overview

Discover the BC178 by Texas Instruments, a high-quality PNP transistor that offers reliable performance and versatility. With a maximum power dissipation of 0.6W and a minimum DC current gain of 120, this transistor is ideal for a wide range of applications. From amplifiers to signal processing circuits, the BC178 provides exceptional value and efficiency. Trust in Texas Instruments' reputation for excellence and innovation, and experience the benefits of using the BC178 in your next project.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications, making this product suitable for applications requiring fast response times.

Configuration: SINGLE

Single configuration transistors are easy to control and install, making this product user-friendly for various electronic circuit designs.

Maximum Power Dissipation (Abs): 0.6 W

With a maximum power dissipation of 0.6W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 120

A minimum DC current gain of 120 ensures reliable amplification of signals, making this transistor suitable for signal processing applications.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand higher temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2A allows this transistor to handle moderate current levels, making it suitable for various electronic circuits.

Nominal Transition Frequency (fT): 200 MHz

With a nominal transition frequency of 200MHz, this transistor is capable of high-frequency operation, making it ideal for RF and microwave applications.

Technical Specifications

Other Function Transistors BC178 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

120

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BC178 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5950-00-991-2187, 5950009912187, 5961-15-135-0231, 5961151350231, 5961-66-036-3771, 5961660363771, 6635-15-103-3011, 6635151033011

NIIN

009912187, 151350231, 660363771, 151033011

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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