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BC177A

Texas Instruments

BC177A by Texas Instruments

BC177A by Texas Instruments is a PNP transistor with a max power dissipation of 0.6W, hFE of 120, and fT of 200MHz. Ideal for low-power applications requiring a single configuration with a max collector current of 0.2A and operating temperature up to 175°C.

Median Price

$8.760

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Master Electronics

USA . 3 parts In-Stock

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TME

Poland . 1,371 parts In-Stock

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$0.800

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$0.284

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$0.251

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American Microsemiconductor Inc.

USA . 1,912 parts In-Stock

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$7.870

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Digiode

USA . 13,433 parts In-Stock

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Anansix

USA . 5,615 parts In-Stock

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Amar Radio Corporation

India . 5,383 parts In-Stock

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ECAB

Sweden . 4,143 parts In-Stock

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Vyrian

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LWI Electronics Inc

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Halfin

Belgium . 1,235 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,075 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 721 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 575 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 266 parts In-Stock

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GES GmbH

Germany . 266 parts In-Stock

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ComSIT Distribution GmbH

Germany . 220 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 125 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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LittleDiode

UK . 56 parts In-Stock

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Lakeview Electronics

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Modulus Dynamics

Lithuania . 1,428 parts In-Stock

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$0.391

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$0.375

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$0.360

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IDEA Electronic Components Group

UK . 4,033 parts In-Stock

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$0.397

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$0.357

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$0.397

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DigiPath Technology Company

USA . 666 parts In-Stock

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$0.746

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MKK Technologies

India . 338 parts In-Stock

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ChromeModa Solutions

Germany . 2,611 parts In-Stock

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$1.736

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$1.424

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Corphita

USA . 8,966 parts In-Stock

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$7.884

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Native Components

USA . 2,119 parts In-Stock

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Lixinc

USA . 18,803 parts In-Stock

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UNI Independent Distributors

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Northwest PG Solutions

USA . 5,292 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Assy Fe

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Parana Technologies

USA . 1,389 parts In-Stock

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$0.474

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Kepictronics

USA . 539 parts In-Stock

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Overview

Unlock the power of innovation with the BC177A by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability in their products. The BC177A falls under the category of Other Function Transistors, offering versatility for various applications. With its PNP polarity and single configuration, this transistor provides a maximum power dissipation of 0.6 W and a minimum DC current gain of 120. Whether you are working on amplifiers, oscillators, or audio circuits, the BC177A delivers exceptional performance with a maximum collector current of 0.2 A and a nominal transition frequency of 200 MHz. Trust Texas Instruments to bring you cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used for high power applications and are suitable for amplification purposes.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making them versatile for various applications.

Maximum Power Dissipation (Abs): 0.6 W

With a high maximum power dissipation, this transistor can handle moderate power levels without the risk of overheating.

Minimum DC Current Gain (hFE): 120

With a high DC current gain, this transistor provides stable and reliable amplification of signals.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows this transistor to withstand heat and operate reliably in various environments.

Maximum Collector Current (IC): 0.2 A

The high maximum collector current rating enables the transistor to handle larger currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency, this transistor can switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Other Function Transistors BC177A attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

120

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

BC177A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-15-071-4266, 5961150714266, 5961-01-047-9234, 5961010479234, 5961-99-118-4899, 5961991184899, 5961-17-039-4700, 5961170394700

NIIN

150714266, 010479234, 991184899, 170394700

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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