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ALVC04DR

Texas Instruments

ALVC04DR by Texas Instruments

ALVC04DR by Texas Instruments is a CMOS logic gate with 6 functions, offering a propagation delay of 3.3 ns. This industrial-grade component operates b/w -40 to 85°C and supports supply voltages from 2.3V to 3.6V. Ideal for surface-mount applications, it comes in a small outline package with dual terminals, making it suitable for various electronic circuits requiring fast signal processing.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 8,193 parts In-Stock

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Digiode

USA . 1,257 parts In-Stock

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Parana Technologies

USA . 14 parts In-Stock

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$12.212

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$12.632

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DigiPath Technology Company

USA . 1,440 parts In-Stock

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$13.447

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IDEA Electronic Components Group

UK . 1,578 parts In-Stock

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$13.721

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$13.035

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$12.349

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ChromeModa Solutions

Germany . 1,264 parts In-Stock

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$13.721

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$11.251

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AZTECH Wire

Italy . 366 parts In-Stock

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$13.773

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One Stop Electronics

USA . 1,157 parts In-Stock

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$46.000

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Corphita

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Northwest PG Solutions

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Native Components

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Overview

Enhance your electronic designs with the ALVC04DR by Texas Instruments. As a leader in logic gates, Texas Instruments offers top-notch quality and reliability. This versatile component is perfect for a wide range of applications, providing seamless integration and superior performance. With fast propagation delay and industrial-grade temperature tolerance, the ALVC04DR is a valuable addition to any project. Trust Texas Instruments to deliver excellence in every aspect, from the package body material to the terminal form. Elevate your designs with the ALVC04DR and experience the difference that quality and innovation can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and facilitating automated assembly processes.

No. of Functions: 6

Having 6 functions in one package offers versatility and efficiency in circuit design, reducing the need for multiple individual components.

Package Shape: RECTANGULAR

Rectangular shape is commonly used in electronic packaging, making it compatible with standard board layouts and facilitating easy placement.

No. of Terminals: 14

Having 14 terminals allows for multiple input and output connections, enabling complex logic operations to be carried out effectively.

Propagation Delay (tpd): 3.3 ns

Low propagation delay of 3.3 ns ensures fast response times in signal processing, making the logic gates suitable for high-speed applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, the logic gates can withstand and perform reliably in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures the logic gates can function effectively in a wide range of temperature settings.

Terminal Position: DUAL

Dual terminal positioning provides stability and secure connections, preventing signal loss or interference during operation.

Width: 3.9 mm

Compact width of 3.9 mm allows for efficient use of space on the circuit board, enabling denser layouts and more streamlined designs.

Minimum Supply Voltage (Vsup): 2.3 V

Low minimum supply voltage of 2.3 V enables energy-efficient operation, reducing power consumption and heat dissipation in the system.

Length: 8.65 mm

With a length of 8.65 mm, the logic gates are compact and space-saving, ideal for applications where board real estate is limited.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, ensuring reliable performance and efficiency in digital circuits.

Terminal Form: GULL WING

Gull wing terminal form offers secure solder connections, enhancing the overall reliability and durability of the logic gates in operation.

Terminal Pitch: 1.27 mm

With a small terminal pitch of 1.27 mm, the logic gates are suitable for compact designs and high-density applications, enabling close spacing of components.

Maximum Supply Voltage (Vsup): 3.6 V

High maximum supply voltage of 3.6 V allows for flexibility in input voltage range, accommodating a wide variety of system requirements and configurations.

Maximum Seated Height: 1.75 mm

Low maximum seated height of 1.75 mm minimizes the overall profile of the logic gates, making them suitable for slim and compact electronic devices.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers space-saving benefits and compatibility with standard mounting methods, facilitating easy integration into circuit board layouts.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable performance in harsh industrial environments, making the logic gates suitable for rugged applications.

Technical Specifications

Logic Gates ALVC04DR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ALVC/VCX/A

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Logic IC Type:

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Propagation Delay (tpd):

3.3 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

ALVC04DR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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