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ALVC04DGVR

Texas Instruments

ALVC04DGVR by Texas Instruments

ALVC04DGVR by Texas Instruments is a CMOS logic gate with 6 functions, offering a propagation delay of 3.3 ns. This industrial-grade component operates b/w -40 to 85°C and supports supply voltages from 2.3V to 3.6V. Its small outline package makes it suitable for various applications requiring fast signal processing in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,015 parts In-Stock

1+ parts

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Digiode

USA . 1,821 parts In-Stock

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1,821

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Distributors (Availability)

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Native Components

USA . 963 parts In-Stock

1+ parts

$0.045

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-

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$0.043

963

$0.045

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$0.043

AZTECH Wire

Italy . 578 parts In-Stock

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$6.879

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578

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One Stop Electronics

USA . 1,266 parts In-Stock

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$10.000

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$10.000

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Parana Technologies

USA . 1,061 parts In-Stock

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$11.008

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$11.469

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1,061

$11.008

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$11.469

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DigiPath Technology Company

USA . 671 parts In-Stock

1+ parts

$12.121

100+ parts

$11.151

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671

$12.121

$11.151

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ChromeModa Solutions

Germany . 2,705 parts In-Stock

1+ parts

$12.368

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$10.142

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2,705

$12.368

$10.142

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IDEA Electronic Components Group

UK . 2,121 parts In-Stock

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$12.368

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$11.750

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$11.131

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$12.368

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Corphita

USA . 2,013 parts In-Stock

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Northwest PG Solutions

USA . 1,199 parts In-Stock

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Overview

Upgrade your electronic projects with the ALVC04DGVR by Texas Instruments, a top-quality logic gate that offers unrivaled performance and reliability. Crafted by the renowned manufacturer Texas Instruments, this small outline, thin profile device boasts a fast propagation delay of 3.3 ns, making it perfect for applications where speed is crucial. With a wide operating temperature range of -40 to 85° °C, this logic gate is ideal for industrial-grade projects. Trust Texas Instruments for cutting-edge technology and exceptional quality in every component. Choose the ALVC04DGVR for seamless integration and superior results in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during production.

No. of Functions: 6

Having 6 functions allows for versatile usage and integration in complex circuit designs, offering flexibility and efficiency.

Propagation Delay (tpd): 3.3 ns

Low propagation delay ensures fast and efficient data processing, making the product suitable for high-speed applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range (-40 to 85 °C) ensures reliable performance in harsh environmental conditions, making the product suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the product.

Technical Specifications

Logic Gates ALVC04DGVR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ALVC/VCX/A

JESD-30 Code:

R-PDSO-G14

Length:

4.4 mm

Logic IC Type:

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Propagation Delay (tpd):

3.3 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

3.6 mm

Trade Compliance

ALVC04DGVR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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