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74LVCH16245ADGGRG4

Texas Instruments

74LVCH16245ADGGRG4 by Texas Instruments

74LVCH16245ADGGRG4 by Texas Instruments is a CMOS bus driver with 8 bits, 2 functions, and 3-state output. It operates at a supply voltage of 1.8V to 3.6V, has a propagation delay of 7.1ns, and can handle up to 24A max I (ol). Ideal for bidirectional control applications in automotive environments due to its small outline package and wide temperature range from -40°C to 125°C.

Median Price

$0.596

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

USA . 336 parts In-Stock

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Dan-Mar Components

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Andel Nordic

Denmark . 486 parts In-Stock

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$2.801

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$2.801

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Parana Technologies

USA . 197 parts In-Stock

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$18.374

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AZTECH Wire

Italy . 751 parts In-Stock

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DigiPath Technology Company

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ChromeModa Solutions

Germany . 5,461 parts In-Stock

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IDEA Electronic Components Group

UK . 1,048 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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Glotronic Ltd.

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Corphita

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Microchip USA

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Overview

Elevate your electronic designs with the 74LVCH16245ADGGRG4 by Texas Instruments, a cutting-edge Bus Driver & Transceiver that promises top-notch quality and reliability. Manufactured by the renowned Texas Instruments, this product offers unparalleled performance and precision in a compact package. Ideal for a wide range of applications, this innovative component boasts fast propagation delay and low power consumption, making it a valuable asset for any project. Experience seamless connectivity and enhanced efficiency with the 74LVCH16245ADGGRG4, where high-quality meets exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Propagation Delay At Nominal Supply: 4 ns

Low propagation delay ensures efficient transmission of signals, making the product suitable for high-speed bus applications.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage, saving power and reducing energy consumption.

Output Characteristics: 3-STATE

The 3-state output allows for flexibility in controlling the bus signals, enhancing the versatility of the product.

Temperature Grade: AUTOMOTIVE

Designed to withstand automotive temperature ranges, making it suitable for use in automotive applications where temperature fluctuations are common.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Bus Driver & Transceivers 74LVCH16245ADGGRG4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DIRECTION CONTROL

Control Type:

COMMON CONTROL

Count Direction:

BIDIRECTIONAL

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e4

Length:

12.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

2

No. of Ports:

2

No. of Terminals:

48

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.3,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

4 ns

Propagation Delay (tpd):

7.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Bus Driver/Transceiver

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Translation:

N/A

Width:

6.1 mm

Trade Compliance

74LVCH16245ADGGRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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