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74LVC1GX04DCKRE4

Texas Instruments

74LVC1GX04DCKRE4 by Texas Instruments

74LVC1GX04DCKRE4 by Texas Instruments is a CMOS logic gate with a propagation delay of 5ns at 1.8V, suitable for automotive applications. It has a max operating temperature of 125°C and can handle a load capacitance of 50pF. This surface-mount device features dual terminal position and Gull Wing form factor in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,517 parts In-Stock

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Digiode

USA . 3,727 parts In-Stock

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AZTECH Wire

Italy . 892 parts In-Stock

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$6.553

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Parana Technologies

USA . 251 parts In-Stock

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$16.031

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$16.372

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IDEA Electronic Components Group

UK . 1,333 parts In-Stock

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$18.012

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$17.111

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$16.211

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ChromeModa Solutions

Germany . 1,247 parts In-Stock

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$18.012

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$14.770

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One Stop Electronics

USA . 489 parts In-Stock

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Corphita

USA . 4,588 parts In-Stock

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DigiPath Technology Company

USA . 1,137 parts In-Stock

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Microchip USA

USA . 1,114 parts In-Stock

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Native Components

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Northwest PG Solutions

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Overview

Unlock the power of innovative technology with the 74LVC1GX04DCKRE4 by Texas Instruments, a high-quality logic gate designed to enhance performance and efficiency. Manufactured by industry leader Texas Instruments, this versatile product is perfect for a wide range of applications in automotive and beyond. With fast propagation delays and low power consumption, this logic gate offers unparalleled value and reliability. Elevate your projects with the Texas Instruments 74LVC1GX04DCKRE4 and experience cutting-edge technology at its best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and flexibility for various applications, making this product a reliable choice.

Propagation Delay At Nominal Supply: 5 ns

Low propagation delay ensures fast response times, making this logic gate suitable for high-speed operations.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort in production.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage of 1.8V, this logic gate helps in reducing power consumption and heat generation.

Load Capacitance (CL): 50 pF

Suitable load capacitance of 50 pF ensures stable operation and compatibility with various circuit configurations.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows this logic gate to be used in a wide range of environments, including automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates 74LVC1GX04DCKRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

5 ns

Propagation Delay (tpd):

18 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

74LVC1GX04DCKRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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