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74F189SJX

Texas Instruments

74F189SJX by Texas Instruments

The Texas Instruments 74F189SJX is a 16x4 SRAM with CMOS technology. It operates asynchronously at 5V, offering a memory density of 64 bits and a max access time of 27ns. Ideal for commercial applications requiring fast parallel memory access in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,418 parts In-Stock

1+ parts

-

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8,418

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Digiode

USA . 2,233 parts In-Stock

1+ parts

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2,233

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Anansix

USA . 1,594 parts In-Stock

1+ parts

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1,594

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,036 parts In-Stock

1+ parts

$4.254

100+ parts

-

1k+ parts

$4.687

10k+ parts

-

2,036

$4.254

-

$4.687

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DigiPath Technology Company

USA . 2,275 parts In-Stock

1+ parts

$4.684

100+ parts

$4.310

1k+ parts

-

10k+ parts

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2,275

$4.684

$4.310

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ChromeModa Solutions

Germany . 5,485 parts In-Stock

1+ parts

$4.780

100+ parts

$3.920

1k+ parts

-

10k+ parts

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5,485

$4.780

$3.920

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IDEA Electronic Components Group

UK . 60 parts In-Stock

1+ parts

$4.780

100+ parts

-

1k+ parts

$4.302

10k+ parts

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60

$4.780

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$4.302

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One Stop Electronics

USA . 989 parts In-Stock

1+ parts

$13.000

100+ parts

-

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989

$13.000

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AZTECH Wire

Italy . 789 parts In-Stock

1+ parts

$14.842

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789

$14.842

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Corphita

USA . 2,399 parts In-Stock

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2,399

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Supply Digital

USA . 1,355 parts In-Stock

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1,355

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Native Components

USA . 630 parts In-Stock

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630

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Northwest PG Solutions

USA . 564 parts In-Stock

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564

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Overview

Discover the cutting-edge 74F189SJX by Texas Instruments, a top-tier SRAM product that embodies quality and reliability. Texas Instruments, a trusted manufacturer, delivers excellence in every component they create, ensuring superior performance and longevity. This versatile device is ideal for a wide range of applications, offering customers exceptional value, efficiency, and seamless operation. Upgrade your systems with the 74F189SJX and experience unrivaled benefits that will elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand environmental factors and physical stress, ensuring reliability and longevity of the product.

Surface Mount: YES

Easy and efficient installation process, suitable for modern PCB designs and manufacturing processes.

Operating Mode: ASYNCHRONOUS

Provides flexibility in data transfer without synchronization requirements, allowing for quick and efficient operations.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that is commonly available, ensuring compatibility with various systems and applications.

Maximum Operating Temperature: 70 °C

Wide temperature range for operation, making it suitable for different environments and conditions.

Technology: CMOS

Low power consumption and high noise immunity, enhancing the efficiency and performance of the product.

Memory Density: 64 bit

High memory density for storing a large amount of data in a compact form factor, making it ideal for memory-intensive applications.

Maximum Access Time: 27 ns

Fast access time for retrieving data quickly, improving overall system performance and responsiveness.

Technical Specifications

SRAM 74F189SJX attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

27 ns

JESD-30 Code:

R-PDSO-G16

Length:

10.11 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Maximum Seated Height:

2.108 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.3085 mm

Trade Compliance

74F189SJX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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