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74CBTD3861DBQRG4

Texas Instruments

74CBTD3861DBQRG4 by Texas Instruments

74CBTD3861DBQRG4 by Texas Instruments is a 10-bit bus driver with a propagation delay of 0.35 ns. It operates at a nominal voltage of 5V and has a load capacitance of 50 pF. This CMOS technology device is ideal for bidirectional control applications in industrial settings due to its low power consumption and small form factor.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,601 parts In-Stock

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Euro-Tech

UK . 2,470 parts In-Stock

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Vyrian

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Parana Technologies

USA . 155 parts In-Stock

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$17.948

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$18.115

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AZTECH Wire

Italy . 821 parts In-Stock

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DigiPath Technology Company

USA . 744 parts In-Stock

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ChromeModa Solutions

Germany . 2,087 parts In-Stock

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$16.536

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IDEA Electronic Components Group

UK . 386 parts In-Stock

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$19.158

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$18.149

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One Stop Electronics

USA . 1,289 parts In-Stock

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Corphita

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Microchip USA

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Northwest PG Solutions

USA . 1,391 parts In-Stock

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Native Components

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Overview

Unlock the power of seamless data transmission with the 74CBTD3861DBQRG4 by Texas Instruments. Designed with precision and quality in mind, this bus driver & transceiver boasts unparalleled performance and reliability. Perfect for a wide range of applications, this product offers customers the value of faster communication, higher efficiency, and enhanced connectivity. Say goodbye to delays and errors, and say hello to a smoother, more streamlined operation with the Texas Instruments 74CBTD3861DBQRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for use in various environments.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into electronic circuits, saving space and improving efficiency.

No. of Bits: 10

Having 10 bits allows for more data to be transmitted and received, increasing the versatility and capabilities of the product.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with common power sources, making it easy to incorporate into existing systems.

Propagation Delay (tpd): 0.35 ns

With a low propagation delay of 0.35ns, data can be transmitted quickly and efficiently, reducing latency and improving overall performance.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this product can withstand a wide temperature range (-40°C to 85°C), making it reliable in harsh environments.

Technology: CMOS

The use of CMOS technology in this product ensures low power consumption and compatibility with a wide range of devices, enhancing its versatility.

Technical Specifications

Bus Driver & Transceivers 74CBTD3861DBQRG4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Control Type:

ENABLE LOW

Count Direction:

BIDIRECTIONAL

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G24

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

2

No. of Bits:

10

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP24,.24

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.003 mA

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

74CBTD3861DBQRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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