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74CBT1G125DBVRE4

Texas Instruments

74CBT1G125DBVRE4 by Texas Instruments

74CBT1G125DBVRE4 by Texas Instruments is a CMOS bus driver with 0.25 ns propagation delay, suitable for bidirectional applications. It operates at a nominal voltage of 5V and has a load capacitance of 50 pF. With a small outline package style, it is ideal for industrial temperature grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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PC Components Company LLC

USA . 2,645 parts In-Stock

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Bristol Electronics

USA . 2,645 parts In-Stock

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Digiode

USA . 2,090 parts In-Stock

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Vyrian

USA . 2,082 parts In-Stock

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Native Components

USA . 593 parts In-Stock

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$0.048

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$0.046

593

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$0.046

Andel Nordic

Denmark . 84 parts In-Stock

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$5.525

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$5.304

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$5.304

84

$5.525

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$5.304

AZTECH Wire

Italy . 810 parts In-Stock

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$17.472

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Parana Technologies

USA . 531 parts In-Stock

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$21.868

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$22.356

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531

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ChromeModa Solutions

Germany . 4,731 parts In-Stock

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$24.571

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$20.148

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IDEA Electronic Components Group

UK . 372 parts In-Stock

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$24.571

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$23.342

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$22.114

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One Stop Electronics

USA . 754 parts In-Stock

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$48.000

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$48.000

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A-Z Elektronik GmbH

Germany . 6,863 parts In-Stock

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Corphita

USA . 4,572 parts In-Stock

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Microchip USA

USA . 1,143 parts In-Stock

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Northwest PG Solutions

USA . 103 parts In-Stock

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Kepictronics

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DigiPath Technology Company

USA . 63 parts In-Stock

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$22.153

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$22.153

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Overview

Elevate your electronic designs with the Texas Instruments 74CBT1G125DBVRE4 bus driver & transceiver. Manufactured to the highest standards, this versatile component boasts a range of applications, ensuring it will meet your project needs with ease. With a fast propagation delay and low power consumption, this small outline package offers exceptional value and performance. Trust in Texas Instruments for quality products that deliver top-notch results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the bus driver & transceiver.

Propagation Delay At Nominal Supply: 0.25 ns

Low propagation delay ensures efficient and fast communication within the bus driver & transceiver.

Surface Mount: YES

Surface mount technology makes it easy to integrate the bus driver & transceiver onto PCBs, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup: 5V

Standard 5V supply voltage allows for compatibility with a wide range of systems and devices.

Load Capacitance (CL): 50 pF

Suitable load capacitance for efficient signal transmission and reception in the bus driver & transceiver.

Power Supplies (V): 5V

Consistent 5V power supply ensures reliable operation of the bus driver & transceiver.

No. of Terminals: 5

5 terminals offer flexibility in connecting the bus driver & transceiver to external components and systems.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting of the bus driver & transceiver on PCBs.

Output Characteristics: 3-STATE

3-state output allows for tristate logic implementation, providing flexibility in controlling bus lines.

Minimum Operating Temperature: -40°C

Wide temperature range ensures reliable operation in various environmental conditions.

Technical Specifications

Bus Driver & Transceivers 74CBT1G125DBVRE4 attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Control Type:

ENABLE LOW

Count Direction:

BIDIRECTIONAL

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.001 mA

Propagation Delay At Nominal Supply:

.25 ns

Propagation Delay (tpd):

.35 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Translation:

N/A

Width:

1.6 mm

Trade Compliance

74CBT1G125DBVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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