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74ACT11030DE4

Texas Instruments

74ACT11030DE4 by Texas Instruments

74ACT11030DE4 by Texas Instruments is a CMOS logic gate with 8 inputs, 8.7 ns propagation delay, and 50 pF load capacitance. It operates in industrial temperatures from -40 to 85°C and has a small outline package suitable for surface mount applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,170 parts In-Stock

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Digiode

USA . 1,862 parts In-Stock

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1,862

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Distributors (Availability)

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Component Stockers USA

USA . 215 parts In-Stock

1+ parts

$3.040

100+ parts

$2.230

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215

$3.040

$2.230

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Native Components

USA . 824 parts In-Stock

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$8.630

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824

$8.630

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Northwest PG Solutions

USA . 1,788 parts In-Stock

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$9.493

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$8.544

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1,788

$9.493

$8.544

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AZTECH Wire

Italy . 288 parts In-Stock

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$17.166

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288

$17.166

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Parana Technologies

USA . 1,086 parts In-Stock

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$20.006

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$1,857.889

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$18.006

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1,086

$20.006

$1,857.889

$18.006

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DigiPath Technology Company

USA . 1,047 parts In-Stock

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$22.029

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$20.267

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1,047

$22.029

$20.267

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ChromeModa Solutions

Germany . 3,211 parts In-Stock

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$22.479

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$18.433

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$22.479

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IDEA Electronic Components Group

UK . 1,728 parts In-Stock

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$22.479

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$21.355

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$20.231

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1,728

$22.479

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$20.231

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One Stop Electronics

USA . 836 parts In-Stock

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$40.000

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Corphita

USA . 612 parts In-Stock

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Overview

Unlock the power of advanced logic with the 74ACT11030DE4 by Texas Instruments. Crafted with precision and expertise, this cutting-edge logic gate offers unparalleled performance and reliability. Ideal for a wide range of applications, this product provides fast propagation delay and low power consumption, making it a standout choice for engineers and designers. Elevate your projects with the quality and innovation that only Texas Instruments can deliver. Experience the difference with the 74ACT11030DE4.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 8.7 ns

Low propagation delay ensures quick response time, making this logic gate suitable for high-speed applications.

No. of Inputs: 8

Having 8 input terminals allows for complex logic operations to be performed efficiently within the same component.

Nominal Supply Voltage / Vsup (V): 5

Operates within standard 5V supply voltage range, making it compatible with most electronic systems.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range (-40 to 85 °C) ensures reliable operation in harsh environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates 74ACT11030DE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

CENTER PIN VCC AND GND

Family:

ACT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

8

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

8.7 ns

Propagation Delay (tpd):

8.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

74ACT11030DE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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