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74ACT11004DWG4

Texas Instruments

74ACT11004DWG4 by Texas Instruments

74ACT11004DWG4 by Texas Instruments is a logic gate with 6 functions, 9.7 ns propagation delay at 5V supply, and 50 pF load capacitance. It is used in industrial applications for its CMOS technology, operating temperature range of -40 to 85 °C, and small outline package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 3,194 parts In-Stock

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Vyrian

USA . 3,181 parts In-Stock

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Native Components

USA . 846 parts In-Stock

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$9.870

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$9.870

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Northwest PG Solutions

USA . 480 parts In-Stock

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$10.857

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$9.771

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AZTECH Wire

Italy . 694 parts In-Stock

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$11.861

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Parana Technologies

USA . 1,434 parts In-Stock

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$25.626

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DigiPath Technology Company

USA . 1,487 parts In-Stock

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$27.451

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ChromeModa Solutions

Germany . 5,162 parts In-Stock

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$28.011

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$22.969

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IDEA Electronic Components Group

UK . 2,150 parts In-Stock

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$28.011

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$26.610

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$25.210

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One Stop Electronics

USA . 879 parts In-Stock

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$34.000

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Component Stockers USA

USA . 436 parts In-Stock

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$99.990

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Corphita

USA . 2,697 parts In-Stock

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Microchip USA

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Perfect Parts

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Overview

Experience the superior quality and reliability of Texas Instruments with the 74ACT11004DWG4 logic gates. Perfect for a wide range of applications, this product offers customers unmatched value and benefits. With a maximum operating temperature of 85°C and a minimum supply voltage of 4.5V, this logic gate ensures optimal performance in industrial settings. Trust in Texas Instruments for cutting-edge technology and innovative solutions that drive your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the logic gates, ensuring longevity and reliability.

Propagation Delay At Nominal Supply: 9.7 ns

Fast propagation delay allows for quick signal processing, making these logic gates suitable for applications that require high-speed operation.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and cost during production.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of electronic systems and components.

Package Shape: RECTANGULAR

Rectangular package shape offers efficient use of space on the PCB, allowing for compact and streamlined designs.

No. of Terminals: 20

With 20 terminals, these logic gates provide a sufficient number of connection points for complex circuit configurations and applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature tolerance of 85°C ensures reliable performance even in demanding environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates 74ACT11004DWG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Additional Features:

CENTER PIN VCC AND GND

Family:

ACT

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

12.8 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

9.7 ns

Propagation Delay (tpd):

9.7 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2.65 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.5 mm

Trade Compliance

74ACT11004DWG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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