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2N5960

Texas Instruments

2N5960 by Texas Instruments

2N5960 by Texas Instruments is a PNP transistor with a max power dissipation of 100W, collector current of 20A, and transition frequency of 20MHz. Ideal for applications requiring high power handling such as amplifiers and power supplies due to its single configuration and high operating temperature of 200°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,419 parts In-Stock

1+ parts

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5,419

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Digiode

USA . 1,396 parts In-Stock

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1,396

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 171 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

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10k+ parts

$0.249

171

$0.259

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-

$0.249

Northwest PG Solutions

USA . 943 parts In-Stock

1+ parts

$0.285

100+ parts

-

1k+ parts

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$0.252

943

$0.285

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-

$0.252

Parana Technologies

USA . 2,005 parts In-Stock

1+ parts

$0.756

100+ parts

-

1k+ parts

$1.758

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2,005

$0.756

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$1.758

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DigiPath Technology Company

USA . 1,012 parts In-Stock

1+ parts

$0.832

100+ parts

$0.765

1k+ parts

-

10k+ parts

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1,012

$0.832

$0.765

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ChromeModa Solutions

Germany . 4,905 parts In-Stock

1+ parts

$0.849

100+ parts

$0.696

1k+ parts

-

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4,905

$0.849

$0.696

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IDEA Electronic Components Group

UK . 856 parts In-Stock

1+ parts

$0.849

100+ parts

-

1k+ parts

$0.764

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856

$0.849

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$0.764

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AZTECH Wire

Italy . 208 parts In-Stock

1+ parts

$19.303

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208

$19.303

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Ampacity Inc.

Singapore . 191 parts In-Stock

1+ parts

$20.050

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191

$20.050

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One Stop Electronics

USA . 672 parts In-Stock

1+ parts

$35.050

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672

$35.050

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Semicontronic

India . 836 parts In-Stock

1+ parts

$60.050

100+ parts

$58.549

1k+ parts

$58.248

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836

$60.050

$58.549

$58.248

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Microchip USA

USA . 8,756 parts In-Stock

1+ parts

$570.999

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8,756

$570.999

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Corphita

USA . 1,242 parts In-Stock

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1,242

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Corohmni

South Africa . 192 parts In-Stock

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192

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Overview

Experience the innovation and quality of Texas Instruments with the 2N5960 PNP transistor. Designed for a variety of applications, this transistor offers reliable performance and efficiency. Whether you're working on audio amplifiers, switching circuits, or voltage regulators, the 2N5960 delivers exceptional value and benefits. Trust in Texas Instruments for high-quality components that meet your needs.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

Single configuration transistors are easier to implement in circuits and offer simplified design, making this product user-friendly for engineers and hobbyists.

Maximum Power Dissipation (Abs): 100 W

With a high maximum power dissipation, this product can handle high power loads without overheating, ensuring reliable performance in demanding applications.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 indicates good amplification capabilities, allowing this product to effectively boost weak signals in circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C ensures that this product can operate in challenging thermal environments without degradation, making it reliable in high-temperature conditions.

Maximum Collector Current (IC): 20 A

With a maximum collector current of 20 A, this product can handle high current loads, making it suitable for power applications where large amounts of current are required.

Nominal Transition Frequency (fT): 20 MHz

A high nominal transition frequency of 20 MHz indicates good high-frequency response, making this product suitable for applications that require fast switching speeds or high-frequency signals.

Technical Specifications

Other Function Transistors 2N5960 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

30

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2N5960 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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