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2N5913

Texas Instruments

2N5913 by Texas Instruments

2N5913 by Texas Instruments is an NPN transistor with a max power dissipation of 3.5W and max operating temp of 200°C. With a max collector current of 0.33A and fT of 175MHz, it's ideal for applications requiring high-frequency switching in electronic circuits.

Median Price

$22.880

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Master Electronics

USA . 72 parts In-Stock

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$22.880

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American Microsemiconductor Inc.

USA . 7,787 parts In-Stock

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$4.440

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Digiode

USA . 4,072 parts In-Stock

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Vyrian

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Electronic Expediters

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ECAB

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Electronics Depot

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LWI Electronics Inc

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GES GmbH

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LittleDiode

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Parana Technologies

USA . 1,527 parts In-Stock

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$2.246

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DigiPath Technology Company

USA . 2,161 parts In-Stock

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$1.786

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$1.643

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ChromeModa Solutions

Germany . 6,961 parts In-Stock

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IDEA Electronic Components Group

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Corphita

USA . 2,296 parts In-Stock

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Northwest PG Solutions

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RTC Component Inc.

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Overview

Elevate your electronics projects with the top-notch quality of the 2N5913 transistor from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unmatched reliability and performance in their products. The NPN configuration and 3.5W power dissipation of the 2N5913 make it ideal for a wide range of applications. From amplifiers to signal processing circuits, this transistor offers exceptional value and benefits to customers looking for superior functionality and efficiency in their designs. Experience the difference with the 2N5913 transistor today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits, making this product suitable for signal amplification applications.

Configuration: SINGLE

Single configuration transistors are easier to implement in circuit designs, making this product user-friendly for electronics enthusiasts and professionals alike.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this product can handle relatively high power levels without risk of damage, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 200 °C

A high maximum operating temperature tolerance allows this product to operate effectively in environments with elevated temperatures, expanding its versatility in various industrial and electronic settings.

Maximum Collector Current (IC): 0.33 A

The maximum collector current rating of 0.33 A indicates the capability of this transistor to handle moderate levels of current flow, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 175 MHz

A high nominal transition frequency of 175 MHz suggests that this transistor is capable of high-frequency operation, making it ideal for applications requiring fast switching speeds or high-frequency signal processing.

Technical Specifications

Other Function Transistors 2N5913 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2N5913 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

2815-01-197-7199, 2815011977199, 5961-00-026-1728, 5961000261728

NIIN

011977199, 000261728

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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