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2N5942

Texas Instruments

2N5942 by Texas Instruments

2N5942 by Texas Instruments is an NPN transistor with a max power dissipation of 140W and a max collector current of 12A. With a min DC current gain of 10 and fT of 50MHz, it's ideal for high-power applications in electronics requiring efficient switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,756 parts In-Stock

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6,756

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Digiode

USA . 2,572 parts In-Stock

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2,572

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Distributors (Availability)

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Parana Technologies

USA . 1,376 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

$1.621

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1,376

$0.490

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$1.621

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DigiPath Technology Company

USA . 1,207 parts In-Stock

1+ parts

$0.539

100+ parts

$0.496

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1,207

$0.539

$0.496

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ChromeModa Solutions

Germany . 3,289 parts In-Stock

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$0.550

100+ parts

$0.451

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3,289

$0.550

$0.451

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IDEA Electronic Components Group

UK . 937 parts In-Stock

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$0.550

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-

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$0.495

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937

$0.550

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$0.495

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Northwest PG Solutions

USA . 1,895 parts In-Stock

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$2.721

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1,895

$2.721

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AZTECH Wire

Italy . 277 parts In-Stock

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$13.517

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277

$13.517

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Ampacity Inc.

Singapore . 908 parts In-Stock

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$18.050

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908

$18.050

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Semicontronic

India . 716 parts In-Stock

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$38.050

100+ parts

$37.099

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$36.908

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716

$38.050

$37.099

$36.908

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One Stop Electronics

USA . 1,389 parts In-Stock

1+ parts

$39.050

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1,389

$39.050

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Native Components

USA . 580 parts In-Stock

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$2.399

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580

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$2.399

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Corohmni

South Africa . 398 parts In-Stock

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398

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Corphita

USA . 229 parts In-Stock

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Overview

Unleash the power of innovation with the Texas Instruments 2N5942 transistor. Designed for superior performance and reliability, this NPN transistor is perfect for a variety of applications in electronics. With a maximum power dissipation of 140W and a high DC current gain, this transistor can handle even the most demanding tasks with ease. Trust in Texas Instruments' reputation for quality and precision engineering to deliver exceptional results every time. Upgrade your projects today with the 2N5942 transistor and experience the difference that top-notch components can make.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used and easily available, making this product compatible with a variety of applications.

Configuration: SINGLE

The single configuration simplifies the design and integration process, saving time and reducing complexity.

Maximum Power Dissipation (Abs): 140 W

The high power dissipation capability allows the transistor to handle heavy loads and high power applications effectively.

Minimum DC Current Gain (hFE): 10

A higher DC current gain ensures proper amplification and signal integrity in various circuit designs.

Maximum Operating Temperature: 200 °C

The high operating temperature range enables the transistor to perform reliably in harsh environments or applications with elevated temperatures.

Maximum Collector Current (IC): 12 A

The high collector current rating allows the transistor to handle large current flows, making it suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency makes this transistor ideal for high-frequency applications, such as RF amplification or signal processing.

Technical Specifications

Other Function Transistors 2N5942 attributes and parameters. Explore more Other Function Transistors devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

10

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Nominal Transition Frequency (fT):

Trade Compliance

2N5942 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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