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2N5945

STMicroelectronics

2N5945 by STMicroelectronics

2N5945 by STMicroelectronics is an NPN transistor with a max power dissipation of 15W, hFE of 20, and IC of 0.8A. It is used in applications requiring a single configuration for functions like amplification and switching at temperatures up to 200 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,068 parts In-Stock

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5,068

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Digiode

USA . 2,067 parts In-Stock

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2,067

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Anansix

USA . 1,490 parts In-Stock

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1,490

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ComSIT Distribution GmbH

Germany . 180 parts In-Stock

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180

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GES GmbH

Germany . 8 parts In-Stock

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8

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R&J Components

USA . 5 parts In-Stock

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Speed Components Ltd

Israel . 2 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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MISTER SPROCKETS

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 1,496 parts In-Stock

1+ parts

$1.680

100+ parts

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$1.512

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1,496

$1.680

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$1.512

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MKK Technologies

India . 1,131 parts In-Stock

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$3.159

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1,131

$3.159

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DigiPath Technology Company

USA . 1,131 parts In-Stock

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$3.159

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$3.159

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Native Components

USA . 840 parts In-Stock

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$9.800

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840

$9.800

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Northwest PG Solutions

USA . 1,012 parts In-Stock

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$10.780

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$9.702

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$10.780

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Corphita

USA . 3,438 parts In-Stock

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3,438

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Parana Technologies

USA . 1,583 parts In-Stock

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$2.009

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$2.009

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RTC Component Inc.

USA . 7 parts In-Stock

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Overview

Unleash the power of innovation with the STMicroelectronics 2N5945 transistor. Crafted by a renowned manufacturer, this NPN transistor is designed to deliver unmatched quality and reliability in a variety of applications. Whether you're looking to amplify signals or control currents, the 2N5945 offers exceptional performance with a maximum power dissipation of 15W and a minimum DC current gain of 20. Trust in STMicroelectronics to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the 2N5945 transistor today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications due to their high input impedance and fast switching speed.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making the product compact and cost-effective.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle heavy loads and high power applications reliably.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain ensures efficient amplification of input signals, making the transistor suitable for audio amplification and signal processing.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Maximum Collector Current (IC): 0.8 A

The high maximum collector current rating enables the transistor to handle high current loads, making it suitable for power switching applications.

Technical Specifications

Other Function Transistors 2N5945 attributes and parameters. Explore more Other Function Transistors devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

20

No. of Elements:

1

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Trade Compliance

2N5945 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-069-6242, 5961010696242, 5961-99-644-5389, 5961996445389

NIIN

010696242, 996445389

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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