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2N3829

Texas Instruments

2N3829 by Texas Instruments

2N3829 by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.36W, hFE of 25, and max. collector-emitter voltage of 20V. Ideal for switching applications due to its fast turn-on time (25ns) and high transition frequency (350MHz). Package style: cylindrical, terminals: wire, and case connection: collector make it suitable for various electronic designs.

Median Price

$1.812

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 17 parts In-Stock

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$2.500

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Electronic Expediters

USA . 9,310 parts In-Stock

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Vyrian

USA . 5,250 parts In-Stock

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Digiode

USA . 4,904 parts In-Stock

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Bristol Electronics

USA . 94 parts In-Stock

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$1.125

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Manoshevitz Elec. Sales

Israel . 19 parts In-Stock

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LittleDiode

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Extreme Components

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LWI Electronics Inc

India . 2 parts In-Stock

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Electronics Depot

USA . 2 parts In-Stock

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Native Components

USA . 10 parts In-Stock

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$0.589

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$0.589

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Northwest PG Solutions

USA . 2,140 parts In-Stock

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$0.648

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$0.648

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Parana Technologies

USA . 978 parts In-Stock

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$1.669

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$2.276

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DigiPath Technology Company

USA . 596 parts In-Stock

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$1.838

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$1.690

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$1.838

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ChromeModa Solutions

Germany . 5,529 parts In-Stock

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$1.875

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$1.538

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IDEA Electronic Components Group

UK . 2,064 parts In-Stock

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$1.875

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$1.688

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$1.875

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.932

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$1.913

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$1.835

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$1.932

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AZTECH Wire

Italy . 265 parts In-Stock

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$5.478

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One Stop Electronics

USA . 602 parts In-Stock

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$59.050

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Corphita

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Assy Fe

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Overview

Upgrade your electronics with the high-quality 2N3829 by Texas Instruments, a top-of-the-line Small Signal Bipolar Junction Transistor. Known for its reliability and efficiency, this PNP transistor is perfect for switching applications, offering seamless performance and durability. With a maximum collector-emitter voltage of 20V and a minimum DC current gain of 25, this transistor ensures optimal functionality in any circuit. Trust Texas Instruments to deliver superior products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and helps in better heat dissipation, making the transistor more reliable in various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits requiring PNP transistors, expanding the versatility of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in controlling electrical signals, making it suitable for a wide range of use cases.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its functionality, ensuring reliability under challenging conditions.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltage levels in circuits, enhancing its compatibility with diverse electronic systems.

Nominal Transition Frequency (fT): 350 MHz

The high nominal transition frequency indicates the transistor's fast switching capability, making it ideal for high-frequency applications where rapid signal processing is essential.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3829 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-52

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

65 ns

Maximum Turn On Time (ton):

25 ns

Trade Compliance

2N3829 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-225-9617, 5961002259617, 5961-99-118-7960, 5961991187960

NIIN

002259617, 991187960

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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