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2N3809

Texas Instruments

2N3809 by Texas Instruments

2N3809 by Texas Instruments is a PNP BJT with 2 elements, hFE of 300, and fT of 100 MHz. Ideal for amplifier applications, it has a max power dissipation of 0.5W, max collector-emitter voltage of 60V, and max collector current of 0.05A.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Vyrian

USA . 4,945 parts In-Stock

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Digiode

USA . 995 parts In-Stock

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995

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Anansix

USA . 696 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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350

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Electronic Expediters

USA . 60 parts In-Stock

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DigiKey Marketplace

USA . 50 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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Parana Technologies

USA . 95 parts In-Stock

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$0.369

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$1.572

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95

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DigiPath Technology Company

USA . 1,908 parts In-Stock

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$0.407

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$0.374

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ChromeModa Solutions

Germany . 4,886 parts In-Stock

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$0.415

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$0.340

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IDEA Electronic Components Group

UK . 1,595 parts In-Stock

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$0.415

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$0.374

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AZTECH Wire

Italy . 792 parts In-Stock

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$9.749

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Microchip USA

USA . 2,421 parts In-Stock

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One Stop Electronics

USA . 626 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,787 parts In-Stock

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Supply Digital

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Assy Fe

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Kepictronics

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Metaverse IC Inc.

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Corphita

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Native Components

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Northwest PG Solutions

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Overview

Elevate your electronics projects with the 2N3809 by Texas Instruments, a top-quality small signal bipolar junction transistor designed for high-performance amplifier applications. With its durable metal package body and PNP polarity, this transistor offers reliable functionality and excellent performance. Whether you're a hobbyist or a professional, the 2N3809 delivers unmatched value, benefits, and advantages, making it a must-have component for your next project. Trust in Texas Instruments' reputation for excellence and enhance your designs with the 2N3809 today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good heat dissipation, improving the overall reliability and efficiency of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Minimum DC Current Gain (hFE): 300

High current gain allows for better amplification of weak signals, making this transistor ideal for amplifier applications.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor can handle higher voltages in amplifier circuits.

Maximum Collector Current (IC): 0.05 A

Able to handle relatively high collector currents, making it suitable for amplifier applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds, making this transistor suitable for high frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3809 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

300

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3809 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-124-9394, 5961011249394, 5961-01-242-5696, 5961012425696

NIIN

011249394, 012425696

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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