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1N702

Texas Instruments

1N702 by Texas Instruments

1N702 by Texas Instruments is a Zener diode with 2.6V nominal reference voltage, 10% max voltage tolerance, and 5mA working test current. It is used for voltage regulation in electronic circuits due to its unidirectional polarity and silicon diode element material.

Median Price

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Lifecycle Status

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10

In-Stock Inventory

1k+

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Vyrian

USA . 4,142 parts In-Stock

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Nova Conductors

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Digiode

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Electronic Expediters

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Resion

USA . 16 parts In-Stock

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First Choice Components Inc.

USA . 7 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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R&J Components

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Manoshevitz Elec. Sales

Israel . 2 parts In-Stock

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Parana Technologies

USA . 1,809 parts In-Stock

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$0.018

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$1.410

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DigiPath Technology Company

USA . 958 parts In-Stock

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IDEA Electronic Components Group

UK . 1,807 parts In-Stock

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ChromeModa Solutions

Germany . 889 parts In-Stock

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Corohmni

South Africa . 296 parts In-Stock

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One Stop Electronics

USA . 549 parts In-Stock

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AZTECH Wire

Italy . 807 parts In-Stock

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Microchip USA

USA . 8,360 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Marpe Global Electronics

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QualityLine Systems

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XL Components Corporation

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Argo Parts USA

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Continental Prestige Electronics

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Corphita

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RTC Component Inc.

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Overview

Enhance your electronic projects with the 1N702 Zener diode from Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments products are a popular choice among engineers and hobbyists alike. The 1N702 is perfect for voltage regulation applications, providing stable and precise output even in challenging environments. With its high voltage tolerance, low power dissipation, and unidirectional polarity, this Zener diode offers exceptional value and performance. Upgrade your designs with the 1N702 and experience the difference today!

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed packaging provides excellent protection for the diode, making it durable and reliable in various operating conditions.

Working Test Current: 5 mA

The low working test current ensures efficient performance and minimal power consumption, making it suitable for low-power applications.

Maximum Voltage Tolerance: 10 %

With a maximum voltage tolerance of 10%, this diode offers accurate and stable voltage regulation, ensuring consistent performance in electronic circuits.

Nominal Reference Voltage: 2.6 V

The nominal reference voltage of 2.6V makes this zener diode suitable for applications requiring precise voltage regulation and protection against voltage spikes.

Maximum Power Dissipation: 0.25 W

The diode's ability to dissipate up to 0.25W of power ensures reliable operation and prevents overheating, making it ideal for demanding applications.

Technical Specifications

Zener Diodes 1N702 attributes and parameters. Explore more Zener Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

2.6 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

10 %

Working Test Current:

5 mA

Trade Compliance

1N702 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-489-0222, 5961004890222, 5961-00-998-3684, 5961009983684, 5961-01-050-7044, 5961010507044, 5961-00-712-3962, 5961007123962, 5961-00-846-9125, 5961008469125

NIIN

004890222, 009983684, 010507044, 007123962, 008469125

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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