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1N708

Texas Instruments

1N708 by Texas Instruments

ZENER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,493 parts In-Stock

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Electronic Expediters

USA . 1,279 parts In-Stock

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Digiode

USA . 820 parts In-Stock

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820

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Century Electronics Ltd.

USA . 2 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 305 parts In-Stock

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$0.162

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$1.503

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305

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$1.503

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DigiPath Technology Company

USA . 968 parts In-Stock

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$0.178

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ChromeModa Solutions

Germany . 2,906 parts In-Stock

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$0.182

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$0.149

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$0.182

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IDEA Electronic Components Group

UK . 1,070 parts In-Stock

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$0.164

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One Stop Electronics

USA . 823 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 303 parts In-Stock

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$8.675

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$8.675

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Andel Nordic

Denmark . 2,396 parts In-Stock

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$10.567

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$10.145

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Microchip USA

USA . 6,174 parts In-Stock

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$12.480

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$12.400

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$12.360

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$12.330

6,174

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Component Stockers USA

USA . 3,855 parts In-Stock

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$23.250

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Native Components

USA . 819 parts In-Stock

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$40.010

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$38.410

819

$40.010

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$38.410

Northwest PG Solutions

USA . 672 parts In-Stock

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$44.011

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Corphita

USA . 4,676 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,757 parts In-Stock

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XL Components Corporation

Australia . 3,081 parts In-Stock

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Marpe Global Electronics

Taiwan . 986 parts In-Stock

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QualityLine Systems

Poland . 556 parts In-Stock

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RTC Component Inc.

USA . 1 parts In-Stock

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Technical Specifications

Zener Diodes 1N708 attributes and parameters. Explore more Zener Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.6 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

10 %

Working Test Current:

25 mA

Trade Compliance

1N708 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-004-0337, 5961000040337, 5961-00-839-9587, 5961008399587, 5961-00-443-1426, 5961004431426

NIIN

000040337, 008399587, 004431426

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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