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1N709

Texas Instruments

1N709 by Texas Instruments

1N709 by Texas Instruments is a Zener diode with 6.2V nominal reference voltage, 10% max voltage tolerance, and 25mA working test current. It is used for voltage regulation in electronic circuits due to its unidirectional polarity and silicon diode element material. The package shape is round with ceramic and glass-sealed body material.

Median Price

$3.490

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 117 parts In-Stock

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$3.490

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117

$3.490

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Vyrian

USA . 6,938 parts In-Stock

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6,938

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Digiode

USA . 2,170 parts In-Stock

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2,170

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Mil-Aero Solutions, Inc.

USA . 90 parts In-Stock

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90

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Electronic Expediters

USA . 90 parts In-Stock

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90

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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70

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ECAB

Sweden . 12 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 679 parts In-Stock

1+ parts

$0.148

100+ parts

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1k+ parts

$1.493

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679

$0.148

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$1.493

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DigiPath Technology Company

USA . 519 parts In-Stock

1+ parts

$0.163

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$0.150

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519

$0.163

$0.150

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ChromeModa Solutions

Germany . 3,133 parts In-Stock

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$0.166

100+ parts

$0.136

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3,133

$0.166

$0.136

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IDEA Electronic Components Group

UK . 1,140 parts In-Stock

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$0.166

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$0.149

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1,140

$0.166

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$0.149

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One Stop Electronics

USA . 1,203 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 556 parts In-Stock

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$7.056

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556

$7.056

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Microchip USA

USA . 3,711 parts In-Stock

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$12.480

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$12.400

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$12.360

10k+ parts

$12.330

3,711

$12.480

$12.400

$12.360

$12.330

Native Components

USA . 269 parts In-Stock

1+ parts

$44.910

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$43.114

269

$44.910

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$43.114

Northwest PG Solutions

USA . 678 parts In-Stock

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$49.401

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678

$49.401

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QUARKTWIN TECHNOLOGY LTD

USA . 11,557 parts In-Stock

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11,557

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LMD Electronica

Estonia . 6,128 parts In-Stock

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6,128

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NIA Electronics

USA . 5,536 parts In-Stock

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5,536

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Corphita

USA . 4,814 parts In-Stock

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4,814

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Montano Global Distributors

Canada . 3,640 parts In-Stock

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3,640

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LOOK Integrated Logistics

Peru . 2,036 parts In-Stock

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2,036

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Ledger Components

France . 24 parts In-Stock

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24

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Overview

Enhance your electronic designs with the 1N709 Zener Diode from Texas Instruments. Known for their high-quality products, Texas Instruments delivers top-notch performance and reliability. Zener diodes are essential in voltage regulation, signal conditioning, and surge protection applications. The 1N709 offers precise voltage control and protection against electrical spikes, ensuring the smooth operation of your circuits. Trust in Texas Instruments for superior quality and unmatched value in every component.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides durability and protection for the zener diode, making it suitable for a variety of applications.

Working Test Current: 25 mA

The working test current of 25 mA ensures that the zener diode can operate reliably within its specified range, contributing to stable performance.

Maximum Voltage Tolerance: 10 %

With a maximum voltage tolerance of 10%, this zener diode offers consistent and accurate voltage regulation, making it a reliable choice for precision applications.

Maximum Power Dissipation: 0.25 W

The maximum power dissipation of 0.25 W indicates the zener diode's ability to handle moderate power levels without overheating, ensuring longevity and reliability.

Nominal Reference Voltage: 6.2 V

The nominal reference voltage of 6.2 V provides a stable reference point for voltage regulation, making this zener diode suitable for various circuit designs.

Technical Specifications

Zener Diodes 1N709 attributes and parameters. Explore more Zener Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.2 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

10 %

Working Test Current:

25 mA

Trade Compliance

1N709 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-125-0000, 5961001250000, 5961-00-805-1804, 5961008051804

NIIN

001250000, 008051804

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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