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1N707

Texas Instruments

1N707 by Texas Instruments

1N707 by Texas Instruments is a Zener diode with 7.1V nominal reference voltage and 10% max voltage tolerance. It has a working test current of 5mA, making it suitable for applications requiring precise voltage regulation in electronic circuits. The diode's ceramic, glass-sealed package body material ensures reliable performance in various environments.

Median Price

$1.367

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 600 parts In-Stock

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$1.480

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$1.480

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Vyrian

USA . 4,812 parts In-Stock

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Digiode

USA . 1,248 parts In-Stock

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Bristol Electronics

USA . 110 parts In-Stock

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$1.254

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$1.254

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ECAB

Sweden . 15 parts In-Stock

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Electronic Expediters

USA . 3 parts In-Stock

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One Stop Electronics

USA . 712 parts In-Stock

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$0.010

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712

$0.010

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Parana Technologies

USA . 586 parts In-Stock

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$0.113

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$1.466

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586

$0.113

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$1.466

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DigiPath Technology Company

USA . 1,782 parts In-Stock

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$0.124

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$0.115

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ChromeModa Solutions

Germany . 3,753 parts In-Stock

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$0.127

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$0.104

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3,753

$0.127

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IDEA Electronic Components Group

UK . 6 parts In-Stock

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$0.127

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$0.114

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6

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Native Components

USA . 391 parts In-Stock

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$1.115

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391

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Northwest PG Solutions

USA . 464 parts In-Stock

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$1.227

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464

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Microchip USA

USA . 9,129 parts In-Stock

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$12.480

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$12.400

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$12.360

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$12.330

9,129

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$12.400

$12.360

$12.330

AZTECH Wire

Italy . 236 parts In-Stock

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$17.151

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QUARKTWIN TECHNOLOGY LTD

USA . 6,739 parts In-Stock

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Corphita

USA . 3,253 parts In-Stock

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West Coast Incorporated

USA . 119 parts In-Stock

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Overview

Discover the endless possibilities with the 1N707 by Texas Instruments, a top-quality zener diode that guarantees reliability and performance. As a leader in the industry, Texas Instruments delivers unmatched precision and innovation in every product. The 1N707 is perfect for a wide range of applications, offering customers exceptional value and benefits. Whether you're looking to stabilize voltage or protect circuits, this zener diode is the perfect solution. Experience the difference with Texas Instruments and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed body material provides durability and protection for the diode, making it suitable for a wide range of applications.

Working Test Current: 5 mA

The low working test current of 5 mA ensures efficient operation and minimizes power consumption.

Maximum Voltage Tolerance: 10 %

The high maximum voltage tolerance of 10% ensures reliability and consistent performance in varying voltage conditions.

Nominal Reference Voltage: 7.1 V

The nominal reference voltage of 7.1 V makes this zener diode suitable for applications requiring a stable voltage reference.

Maximum Power Dissipation: 0.25 W

The high maximum power dissipation of 0.25 W allows the diode to handle high power loads without overheating, ensuring long-term reliability.

Technical Specifications

Zener Diodes 1N707 attributes and parameters. Explore more Zener Diodes devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Nominal Reference Voltage:

7.1 V

Surface Mount:

NO

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

10 %

Working Test Current:

5 mA

Trade Compliance

1N707 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-00-043-4249, 5961000434249, 5961-00-712-3964, 5961007123964

NIIN

000434249, 007123964

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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