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Z0103NA5AL2

STMicroelectronics

Z0103NA5AL2 by STMicroelectronics

Z0103NA5AL2 by STMicroelectronics is a single TRIAC designed for AC applications, featuring a max RMS on-state current of 1 A and a repetitive peak off-state voltage of 800 V. It operates b/w -40 °C to 125 °C, making it ideal for various environments. With a low gate trigger current of just 5 mA, it's perfect for efficient control in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,336 parts In-Stock

1+ parts

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2,336

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Digiode

USA . 1,006 parts In-Stock

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1,006

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Anansix

USA . 209 parts In-Stock

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209

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,231 parts In-Stock

1+ parts

$2.100

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1,231

$2.100

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IDEA Electronic Components Group

UK . 415 parts In-Stock

1+ parts

$2.650

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$2.385

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415

$2.650

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$2.385

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MKK Technologies

India . 2,293 parts In-Stock

1+ parts

$4.982

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2,293

$4.982

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DigiPath Technology Company

USA . 2,293 parts In-Stock

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$4.982

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2,293

$4.982

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AZTECH Wire

Italy . 757 parts In-Stock

1+ parts

$11.820

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757

$11.820

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QUARKTWIN TECHNOLOGY LTD

USA . 11,934 parts In-Stock

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11,934

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Corphita

USA . 4,187 parts In-Stock

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4,187

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Parana Technologies

USA . 94 parts In-Stock

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$3.168

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94

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$3.168

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Overview

Experience unmatched reliability with the Z0103NA5AL2 TRIAC from STMicroelectronics, a leader in semiconductor innovation. This robust component excels in controlling AC loads across diverse applications, from lighting to motor control, ensuring smooth performance even in extreme temperatures. With its efficient gate triggering and minimal leakage current, it not only enhances energy efficiency but also reduces operational costs, making it a smart choice for your next project. Trust in STMicroelectronics for quality that powers your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures long-lasting performance and resistance to environmental stresses.

Maximum DC Gate Trigger Current: 5 mA

A maximum gate trigger current of 5 mA allows for low power consumption during operation, making it suitable for energy-efficient applications.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate into various applications.

Package Shape: RECTANGULAR

The rectangular shape enhances space efficiency on PCBs, allowing for versatile placement options in circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole termination provides excellent mechanical stability and ease of soldering, ensuring reliable connections.

Maximum Leakage Current: 0.5 mA

With a low leakage current of 0.5 mA, this TRIAC minimizes power losses while enhancing safety and efficiency in circuits.

No. of Terminals: 3

The three-terminal configuration allows for straightforward implementation in various control and switching applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style affords effective heat dissipation, promoting reliable operation under varying conditions.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature of 125 °C provides reliability and performance in demanding environments.

Trigger Device Type: 4 QUADRANT LOGIC LEVEL TRIAC

The 4 quadrant logic level TRIAC allows for versatile control, making it capable in both AC and DC applications.

Minimum Operating Temperature: -40 °C

The capability to operate at temperatures as low as -40 °C makes this TRIAC suitable for extreme weather conditions.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and reduces the risk of corrosion, extending component life.

Terminal Position: BOTTOM

Bottom terminal positioning aids in compact layouts and efficient thermal management on PCBs.

Maximum RMS On-state Current: 1 A

With a maximum RMS on-state current of 1 A, this TRIAC can handle moderate loads effectively in diverse applications.

Maximum DC Gate Trigger Voltage: 1.3 V

A low maximum gate trigger voltage of 1.3 V enhances compatibility with low-voltage control signals.

Repetitive Peak Off-state Voltage: 800 V

An 800 V rating for repetitive peak off-state voltage provides a robust safety margin for high-voltage switching applications.

Minimum Critical Rate of Rise of Off-state Voltage: 10 V/µs

A minimum critical rate of rise of off-state voltage of 10 V/µs allows for reliable and fast switching, ideal for fast-paced applications.

Maximum Holding Current: 7 mA

A maximum holding current of 7 mA ensures reliable turn-off behavior, promoting stability in various operational states.

Technical Specifications

Triode For Alternating Current (TRIAC) Z0103NA5AL2 attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

10 V/us

Maximum DC Gate Trigger Current:

5 mA

Maximum DC Gate Trigger Voltage:

1.3 V

Maximum Holding Current:

7 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

R-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.5 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

1 A

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

Z0103NA5AL2 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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