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TSV324AIPT

STMicroelectronics

TSV324AIPT by STMicroelectronics

TSV324AIPT from STMicroelectronics is a micropower operational amplifier with a max input offset voltage of 1000 µV and a common mode reject ratio of 80 dB. It operates within -40 °C to 125°C, making it ideal for automotive applications. This compact, surface-mount device features four functions in a thin profile package.

Median Price

-

Lifecycle Status

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3

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1k+

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Vyrian

USA . 2,708 parts In-Stock

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Anansix

USA . 2,226 parts In-Stock

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2,226

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Digiode

USA . 664 parts In-Stock

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664

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IDEA Electronic Components Group

UK . 635 parts In-Stock

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$3.484

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$3.136

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635

$3.484

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$3.136

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MKK Technologies

India . 1,817 parts In-Stock

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$6.552

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$6.552

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DigiPath Technology Company

USA . 1,817 parts In-Stock

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$6.552

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1,817

$6.552

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Corphita

USA . 2,318 parts In-Stock

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2,318

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Parana Technologies

USA . 937 parts In-Stock

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$4.166

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937

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$4.166

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Overview

Elevate your designs with the TSV324AIPT operational amplifier from STMicroelectronics, a trusted leader in semiconductor innovation. This versatile, high-performance op-amp boasts exceptional precision and low power consumption, making it ideal for automotive and industrial applications. With its compact size and superior reliability, the TSV324AIPT empowers engineers to create cutting-edge solutions that enhance efficiency and performance. Experience the synergy of quality and innovation—choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, ensuring longevity in various applications.

Maximum Input Offset Voltage: 1000 uV

A low offset voltage enhances the accuracy of signal processing, making the op-amp suitable for precision circuits.

Maximum Average Bias Current (IIB): 0.15 uA

The low bias current minimizes errors in high-impedance applications, improving the performance of sensitive measurements.

Surface Mount: YES

Surface mount technology allows for compact designs and easier integration into modern PCB layouts.

No. of Functions: 4

With multiple functions, this op-amp allows for versatile applications in signal amplification and processing.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient board layouts, maximizing space utilization in electronic designs.

Nominal Common Mode Reject Ratio: 80 dB

A high common mode reject ratio improves signal integrity by minimizing interference from noise, suitable for precision applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this op-amp suitable for battery-powered and low-voltage applications.

Power Supplies (V): 3/5

Flexible power supply options allow for compatibility with various circuit designs and power management strategies.

No. of Terminals: 14

The 14-terminal configuration provides ample connectivity options for multiple input/output configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This small and thin package style is advantageous for space-constrained applications, promoting compact designs.

Maximum Supply Voltage Limit: 7 V

The higher supply voltage limit enhances flexibility, enabling use in a wider range of applications.

Maximum Operating Temperature: 125 °C

The capability to operate at high temperatures makes it suitable for automotive and industrial applications where heat is a factor.

Maximum Bias Current (IIB) @25°C: 0.13 uA

An even lower bias current at room temperature further improves accuracy in sensitive electronic applications.

Frequency Compensation: YES

Built-in frequency compensation simplifies design considerations for stability in various applications.

Minimum Voltage Gain: 5000

A minimum voltage gain of 5000 facilitates significant signal amplification, essential for weak signal processing.

Minimum Operating Temperature: -40 °C

The wide temperature range ensures reliable operation in extreme environments, addressing diverse application needs.

Terminal Position: DUAL

Dual terminal positioning allows for efficient PCB layout and better signal routing in multi-function applications.

Maximum Seated Height: 1.2 mm

The low seated height enhances compatibility with low-profile PCB designs, catering to compact device requirements.

Width: 4.4 mm

The 4.4 mm width is suitable for lightweight and space-efficient circuit designs.

Micropower: YES

Micropower consumption makes this op-amp ideal for portable and battery-operated devices, ensuring power efficiency.

Length: 5 mm

The compact length aids in tight layout designs, essential for modern electronics aiming for reduced form factors.

Temperature Grade: AUTOMOTIVE

Automotive rating ensures reliability under various environmental conditions, crucial for automotive applications.

Nominal Unity Gain Bandwidth: 1300 kHz

A high unity gain bandwidth indicates fast response times, ideal for applications requiring rapid signal processing.

Technology: BICMOS

The BICMOS technology combines the advantages of bipolar and CMOS technologies, enhancing performance and power efficiency.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and assembly on PCB, improving manufacturing efficiency.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it is perfect for a wide range of applications including filters, amplifiers, and oscillators.

Maximum Supply Current: 3.5 mA

A low maximum supply current enhances battery life in portable applications while maintaining performance.

Nominal Negative Supply Voltage (Vsup): 0 V

Operating with a nominal negative supply of 0 V simplifies design considerations in dual-supply configurations.

Architecture: VOLTAGE-FEEDBACK

The voltage-feedback architecture is versatile, suitable for various signal processing applications while ensuring stability.

Packing Method: TAPE AND REEL

Tape and reel packing improves automation in the manufacturing process, facilitating high-volume production.

Nominal Slow Rate: 0.6 V/us

A nominal slew rate of 0.6 V/us ensures adequate response for a variety of signal frequencies, suitable for general applications.

Terminal Pitch: 0.65 mm

The 0.65 mm terminal pitch allows for dense circuit designs while maintaining ease of assembly.

Technical Specifications

Operational Amplifiers (Op Amps) TSV324AIPT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

1000 uV

Minimum Voltage Gain:

5000

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

150 nA

Maximum Bias Current (IIB) @25 °C:

130 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

3.5 mA

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3/e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

TSV324AIPT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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