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TSV321IDT

STMicroelectronics

TSV321IDT by STMicroelectronics

TSV321IDT by STMicroelectronics is a micropower operational amplifier ideal for automotive applications. It features a max input offset voltage of 3000 µV, a common mode reject ratio of 80 dB, and operates within -40 °C to 125 °C. Its compact design and low bias current make it suitable for space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,212 parts In-Stock

1+ parts

-

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13,212

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Digiode

USA . 2,923 parts In-Stock

1+ parts

-

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2,923

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Anansix

USA . 2,745 parts In-Stock

1+ parts

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2,745

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R&J Components

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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2,500

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 442 parts In-Stock

1+ parts

$1.758

100+ parts

-

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-

10k+ parts

-

442

$1.758

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IDEA Electronic Components Group

UK . 1,560 parts In-Stock

1+ parts

$2.777

100+ parts

-

1k+ parts

$2.499

10k+ parts

-

1,560

$2.777

-

$2.499

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MKK Technologies

India . 279 parts In-Stock

1+ parts

$5.221

100+ parts

-

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279

$5.221

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DigiPath Technology Company

USA . 279 parts In-Stock

1+ parts

$5.221

100+ parts

-

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279

$5.221

-

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AZTECH Wire

Italy . 98 parts In-Stock

1+ parts

$16.000

100+ parts

-

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98

$16.000

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Component Stockers USA

USA . 530 parts In-Stock

1+ parts

$99.990

100+ parts

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530

$99.990

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Corphita

USA . 3,938 parts In-Stock

1+ parts

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3,938

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Vigor

Singapore . 2,475 parts In-Stock

1+ parts

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2,475

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A-Z Elektronik GmbH

Germany . 2,250 parts In-Stock

1+ parts

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2,250

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Kepictronics

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Parana Technologies

USA . 1,481 parts In-Stock

1+ parts

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100+ parts

$3.320

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1,481

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$3.320

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Overview

Elevate your designs with the TSV321IDT from STMicroelectronics—an operational amplifier that embodies excellence. Renowned for quality and reliability, STMicroelectronics delivers this micropower gem, perfect for automotive applications and beyond. With impressive noise performance and low bias current, the TSV321IDT ensures precision and efficiency in every circuit. Experience unmatched value and innovation that power your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum Input Offset Voltage: 3000 uV

A low maximum input offset voltage enhances precision in applications requiring accurate signal amplification.

Maximum Average Bias Current (IIB): 0.15 uA

This low bias current helps in minimizing power consumption, ideal for battery-operated devices.

Surface Mount: YES

The surface mount capability allows for compact designs and ease of automated assembly.

Package Shape: RECTANGULAR

The rectangular shape is efficient for board space and simplifies layout in various configurations.

Nominal Common Mode Reject Ratio: 80 dB

A high CMRR indicates excellent performance in rejecting noise and interference, which is essential for high-fidelity applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes it suitable for low-voltage applications and energy-efficient designs.

Power Supplies (V): 3/5

Compatibility with both 3V and 5V power supplies provides versatility for various circuit designs.

No. of Terminals: 8

The 8-terminal configuration provides sufficient connections for various functionalities in compact designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-efficient PCB designs, which is critical in modern electronics.

Maximum Supply Voltage Limit: 7 V

A maximum supply voltage limit of 7V increases design flexibility while maintaining operational stability.

Maximum Operating Temperature: 125 °C

High operating temperature limits make this Op Amp suitable for automotive and industrial applications.

Maximum Bias Current (IIB) @25°C: 0.13 uA

Minimizing bias current even further at 25 °C reinforces its suitability for low-power applications.

Frequency Compensation: YES

Built-in frequency compensation allows for stable operation across various frequencies, improving performance consistency.

Minimum Voltage Gain: 5000

A high minimum voltage gain is advantageous for applications requiring significant signal amplification.

Minimum Operating Temperature: -40 °C

The wide temperature range makes this Op Amp suitable for harsh environments, including automotive applications.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish enhances reliability and ensures better solderability, crucial for long-term performance.

Terminal Position: DUAL

The dual terminal position allows for easier PCB routing and component layout, aiding in design efficiency.

Maximum Seated Height: 1.75 mm

A low profile height contributes to overall compactness in electronic designs, making it suitable for slim devices.

Width: 3.9 mm

The width is optimized for space-efficient designs, allowing for more components on a PCB.

Micropower: YES

Micropower consumption is ideal for battery-powered devices, extending the life and efficiency of the system.

Length: 4.9 mm

The length contributes to a compact footprint, making it easier to integrate into small devices.

Temperature Grade: AUTOMOTIVE

Designed for automotive standards, ensuring reliability and performance in automotive applications.

Nominal Unity Gain Bandwidth: 1300 kHz

A high unity gain bandwidth is essential for applications requiring fast response times and minimal signal distortion.

Technology: BICMOS

BICMOS technology combines the benefits of both bipolar and CMOS processes, leading to improved performance and efficiency.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and improve thermal performance in PCB assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier means versatility in signal processing applications, from amplification to filtering.

Maximum Supply Current: 0.835 mA

Low maximum supply current indicates reduced power consumption, which is ideal for energy-sensitive applications.

Nominal Negative Supply Voltage (Vsup): 0 V

Operating with a nominal negative supply voltage of 0 V simplifies the design by reducing complexity in power supply routing.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture provides excellent linearity and wide bandwidth, enhancing overall performance in applications.

Packing Method: TAPE AND REEL

Tape and reel packing allows for efficient automated assembly, reducing manufacturing costs and increasing productivity.

Nominal Slow Rate: 0.6 V/us

A nominal slow rate indicates suitability for applications where controlled slew rates are necessary to avoid distortion.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is standard for surface-mount devices, making it easier to integrate into various layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TSV321IDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BICMOS

Power Supply:

3/5 V

Total Functions:

1

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1.3 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

3000 uV

Minimum Voltage Gain:

5000

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

150 nA

Maximum Bias Current (IIB) @25 °C:

130 nA

Operational Characteristics

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

835 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TSV321IDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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