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TS820-700H

STMicroelectronics

TS820-700H by STMicroelectronics

TS820-700H by STMicroelectronics is a single SCR with a max repetitive peak reverse voltage of 700 V and non-repetitive peak on-state current of 73 A. It operates efficiently in temperatures from -40 °C to 125°C, making it ideal for power control applications. Its compact through-hole design ensures easy integration into various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,110 parts In-Stock

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Anansix

USA . 1,694 parts In-Stock

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Vyrian

USA . 102 parts In-Stock

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102

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,267 parts In-Stock

1+ parts

$2.118

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$1.906

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2,267

$2.118

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$1.906

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MKK Technologies

India . 125 parts In-Stock

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$3.982

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$3.982

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DigiPath Technology Company

USA . 125 parts In-Stock

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$3.982

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125

$3.982

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 3,747 parts In-Stock

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Parana Technologies

USA . 174 parts In-Stock

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$2.532

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$2.532

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Overview

Unlock the power of reliable performance with the TS820-700H from STMicroelectronics. Designed for optimal efficiency in demanding applications, this Silicon Controlled Rectifier guarantees superior reliability and thermal management, making it ideal for industrial controls and power supplies. With STMicroelectronics' commitment to quality and innovation, you can trust that your projects will benefit from enhanced durability and reduced downtime. Choose the TS820-700H for peace of mind and exceptional value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and excellent performance in various environments.

Maximum DC Gate Trigger Current: 0.2 mA

A low gate trigger current helps in reducing power consumption and enhances operational efficiency.

Configuration: SINGLE

Single configuration is ideal for applications requiring compact solutions without compromising functionality.

Non Repetitive Peak On-state Current: 73 A

This high non-repetitive peak current capability makes it suitable for applications with heavy load demands.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient use of space on printed circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer reliable mechanical and electrical connections, making installation simple.

Maximum On-state Current: 5 A

A maximum on-state current of 5 A indicates robustness, suitable for a variety of controlled applications.

Maximum Leakage Current: 1 mA

Low leakage current enhances energy efficiency and minimizes power loss in standby applications.

Repetitive Peak Reverse Voltage: 700 V

This high voltage rating allows it to handle significant reverse voltages, ideal for power electronic circuits.

No. of Terminals: 3

A three-terminal design offers versatile and straightforward connectivity for various applications.

Package Style (Meter): IN-LINE

In-line packaging provides ease of integration into existing designs and systems.

Maximum Operating Temperature: 125 °C

High operating temperature capability ensures reliability and performance in demanding environments.

Trigger Device Type: SCR

As an SCR, it excels in controlling high-power applications with efficient switching capabilities.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures expands its application range to extreme environments.

Terminal Position: SINGLE

Single terminal position ensures straightforward layouts and connections in circuit design.

Maximum RMS On-state Current: 8 A

A high RMS on-state current enhances its suitability for continuous operation under significant loads.

Maximum DC Gate Trigger Voltage: 0.8 V

A low gate trigger voltage ensures efficient driving of the SCR, reducing overall circuit complexity.

Case Connection: ANODE

Anode case connection simplifies circuit design and improves reliability in connecting configurations.

Repetitive Peak Off-state Voltage: 700 V

This high off-state voltage capability makes it reliable for interfacing with high-voltage systems.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/µs

A fast rate of rise is critical in protecting against voltage transients in high-speed applications.

Maximum Holding Current: 5 mA

Low holding current allows the SCR to remain in the off state with minimal current, enhancing energy conservation.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS820-700H attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSIP-T3

Maximum Leakage Current:

1 mA

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

700 V

Repetitive Peak Reverse Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS820-700H Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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