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TS820-700B

STMicroelectronics

TS820-700B by STMicroelectronics

The STMicroelectronics TS820-700B is a Silicon Controlled Rectifier with 700V repetitive peak reverse voltage and 5A max on-state current. It has a 0.2mA max DC gate trigger current, making it suitable for applications requiring precise control of power flow in electronic circuits. The SCR comes in a small outline package with gull wing terminals, ideal for surface mount configurations in various temperature environments.

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3

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1k+

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Digiode

USA . 4,978 parts In-Stock

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4,978

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Vyrian

USA . 4,086 parts In-Stock

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4,086

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Anansix

USA . 927 parts In-Stock

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927

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IDEA Electronic Components Group

UK . 2,252 parts In-Stock

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$3.283

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-

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$2.954

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2,252

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$2.954

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MKK Technologies

India . 826 parts In-Stock

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$6.173

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826

$6.173

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DigiPath Technology Company

USA . 826 parts In-Stock

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$6.173

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826

$6.173

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Corphita

USA . 1,437 parts In-Stock

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1,437

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Parana Technologies

USA . 793 parts In-Stock

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$3.925

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793

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$3.925

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Overview

Unleash the power of reliable performance with the TS820-700B by STMicroelectronics. This high-quality Silicon Controlled Rectifier offers unrivaled durability and efficiency, making it perfect for a wide range of applications. From industrial machinery to consumer electronics, this SCR delivers superior functionality and longevity. Trust in STMicroelectronics' reputation for excellence and choose the TS820-700B for all your power control needs. Experience the value and benefits this product brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the internal components of the SCR.

Maximum DC Gate Trigger Current: 0.2 mA

The low DC gate trigger current requirement allows for precise control and activation of the SCR, making it reliable and efficient.

Configuration: SINGLE

The single configuration simplifies the circuit design and installation process, making it easy to integrate into various applications.

Non Repetitive Peak On-state Current: 73 A

The high non-repetitive peak on-state current rating ensures that the SCR can handle sudden surges of current without damage, making it suitable for high-power applications.

Surface Mount: YES

Being surface mountable allows for easy and space-saving PCB mounting, making it ideal for compact electronic designs.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering on the PCB, improving the overall stability and reliability of the SCR.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering on the PCB, ensuring a secure connection and efficient heat dissipation.

Maximum On-state Current: 5 A

The maximum on-state current rating of 5 A makes the SCR suitable for medium to high-power applications, providing reliable performance under load.

Repetitive Peak Reverse Voltage: 700 V

The high repetitive peak reverse voltage rating of 700 V ensures the SCR can withstand reverse voltage spikes, making it robust for various circuit protection applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection and installation process, making the SCR easy to use in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices and applications with limited space.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, the SCR can withstand higher temperature environments, ensuring reliable performance in a range of applications.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier, this device provides precise control over the current flow in the circuit, enhancing the efficiency and performance of the system.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C allows the SCR to function in low-temperature environments, making it versatile for use in different conditions.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish on the terminals ensures good conductivity and solderability, providing a reliable electrical connection in the circuit.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and ensures proper alignment, making it easy to integrate into various circuit designs.

Maximum RMS On-state Current: 8 A

The high maximum RMS on-state current rating of 8 A allows the SCR to handle continuous load currents effectively, making it suitable for high-power applications.

Maximum DC Gate Trigger Voltage: 0.8 V

The low DC gate trigger voltage requirement of 0.8 V ensures efficient control over the SCR, enhancing the performance and reliability of the device.

Case Connection: ANODE

The anode case connection simplifies the circuit layout and improves the thermal management of the SCR, ensuring optimal performance under various operating conditions.

Repetitive Peak Off-state Voltage: 700 V

The high repetitive peak off-state voltage rating of 700 V ensures the SCR can withstand voltage spikes and transients, making it suitable for reliable circuit protection.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

The minimum critical rate of rise of off-state voltage of 5 V/us ensures stability and reliability in the SCR's switching characteristics, making it suitable for precise control applications.

Maximum Holding Current: 5 mA

The maximum holding current rating of 5 mA ensures the SCR can maintain its on-state conduction state without requiring additional gate trigger input, improving efficiency in continuous load conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at peak reflow temperature of 30 seconds ensures proper soldering and reliability during the assembly process, making it suitable for mass production applications.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper soldering and bonding of the SCR to the PCB, providing a reliable electrical connection in the circuit.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS820-700B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Additional Features:

SENSITIVE GATE

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

700 V

Repetitive Peak Reverse Voltage:

700 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

TS820-700B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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