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TS820-400B

STMicroelectronics

TS820-400B by STMicroelectronics

The STMicroelectronics TS820-400B is a SCR with 400V repetitive peak off-state voltage, 73A non-repetitive peak on-state current, and 0.2mA max DC gate trigger current. It is used in applications requiring high power switching capabilities in a compact small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,189 parts In-Stock

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4,189

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Anansix

USA . 2,242 parts In-Stock

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2,242

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Vyrian

USA . 2,031 parts In-Stock

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2,031

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,483 parts In-Stock

1+ parts

$3.757

100+ parts

-

1k+ parts

$3.382

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1,483

$3.757

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$3.382

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MKK Technologies

India . 2,297 parts In-Stock

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$7.065

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2,297

$7.065

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DigiPath Technology Company

USA . 2,297 parts In-Stock

1+ parts

$7.065

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2,297

$7.065

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Corphita

USA . 3,773 parts In-Stock

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3,773

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Parana Technologies

USA . 409 parts In-Stock

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$4.492

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409

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$4.492

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Overview

Unlock the power of reliable performance with the TS820-400B Silicon Controlled Rectifier from STMicroelectronics. Designed for maximum efficiency, this SCR offers unparalleled quality and durability for a wide range of applications. Whether you're looking to improve your industrial processes or enhance your electronic projects, the TS820-400B delivers exceptional value with its high on-state current, low leakage current, and precise trigger voltage control. Trust in STMicroelectronics to provide the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum DC Gate Trigger Current: 0.2 mA

Efficiently triggers the gate without requiring high current input, making it energy-efficient.

Configuration: SINGLE

Simplified design and operation with a single configuration, reducing complexity and ease of use.

Non Repetitive Peak On-state Current: 73 A

Capable of handling high peak currents, making it suitable for demanding applications.

Surface Mount: YES

Ease of installation on a circuit board, saving space and allowing for efficient assembly.

Terminal Form: GULL WING

Provides secure connections and easy soldering for reliable performance.

Maximum On-state Current: 5 A

Suitable for applications requiring a moderate current rating, making it versatile for different uses.

Repetitive Peak Reverse Voltage: 400 V

Handles high voltage reversals reliably, ensuring stable performance in various conditions.

Maximum Repetitive Peak Off-state Leakage Current: 10 uA

Low leakage current minimizes power loss and improves efficiency during off-state operation.

No. of Terminals: 2

Simple two-terminal setup for easy connection and integration into existing circuits.

Package Style (Meter): SMALL OUTLINE

Compact design for space-saving installation in electronic devices, ideal for compact applications.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures without compromising performance, suitable for demanding environments.

Trigger Device Type: SCR

SCR technology provides reliable switching capabilities for controlling power in various applications.

Minimum Operating Temperature: -40 °C

Operates effectively in low-temperature environments, ensuring reliable performance in extreme conditions.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides corrosion resistance and solderability for long-term reliability.

Terminal Position: SINGLE

Single terminal position for easy installation and connection, simplifying the setup process.

Maximum RMS On-state Current: 8 A

Handles moderate RMS currents effectively, suitable for various power control applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage for efficient operation with minimal power consumption.

Case Connection: ANODE

Anode case connection for convenient circuit integration and reliable performance.

Repetitive Peak Off-state Voltage: 400 V

High repetitive off-state voltage capability for reliable operation in demanding conditions.

Minimum Critical Rate of Rise of Off-state Voltage: 5 V/us

Fast critical rate of rise for off-state voltage for quick and reliable switching performance.

Maximum Holding Current: 5 mA

Low holding current for energy efficiency during off-state operation, reducing power consumption.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TS820-400B attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

5 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Non Repetitive Peak On-state Current:

73 A

No. of Elements:

1

No. of Terminals:

2

Maximum On-state Current:

5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

8 A

Maximum Repetitive Peak Off-state Leakage Current:

10 uA

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

TS820-400B Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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