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TS613IDWT

STMicroelectronics

TS613IDWT by STMicroelectronics

TS613IDWT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 10 mV and a nominal CMRR of 108 dB. It operates within -40 °C to 85°C, making it ideal for industrial applications. Its high slew rate of 23 V/µs ensures fast signal processing.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,524 parts In-Stock

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4,524

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Anansix

USA . 2,301 parts In-Stock

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2,301

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Digiode

USA . 120 parts In-Stock

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120

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IDEA Electronic Components Group

UK . 1,461 parts In-Stock

1+ parts

$5.866

100+ parts

-

1k+ parts

$5.279

10k+ parts

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1,461

$5.866

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$5.279

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Microchip USA

USA . 325 parts In-Stock

1+ parts

$7.276

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325

$7.276

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MKK Technologies

India . 1,179 parts In-Stock

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$11.030

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1,179

$11.030

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DigiPath Technology Company

USA . 1,179 parts In-Stock

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$11.030

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1,179

$11.030

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AZTECH Wire

Italy . 1,194 parts In-Stock

1+ parts

$14.230

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1,194

$14.230

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Vigor

Singapore . 4,321 parts In-Stock

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4,321

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Parana Technologies

USA . 732 parts In-Stock

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$7.014

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732

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$7.014

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Corphita

USA . 261 parts In-Stock

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261

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Overview

Enhance your designs with the TS613IDWT operational amplifier from STMicroelectronics, a trusted leader in semiconductor innovation. This versatile Op Amp delivers exceptional performance, boasting high precision and stability, making it ideal for industrial applications. Its compact size and robust temperature range ensure reliability in demanding environments. Choose the TS613IDWT to elevate your projects and experience unmatched quality, efficiency, and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material ensures reliable performance in various environments, making it suitable for industrial applications.

Maximum Input Offset Voltage: 10000 uV

A low maximum input offset voltage enhances accuracy in signal processing, which is critical for precision applications.

Maximum Average Bias Current (IIB): 30 uA

This low bias current results in minimal error in signal amplification, making the product ideal for sensitive circuits.

Surface Mount: YES

The surface mount design allows for efficient use of space and enables automated assembly processes, aiding in high-volume production.

No. of Functions: 2

The ability to perform dual functions enhances versatility, allowing it to be used in a variety of applications.

Package Shape: RECTANGULAR

The rectangular package shape is standard and facilitates easy integration onto PCBs.

Nominal Common Mode Reject Ratio: 108 dB

A high CMRR improves the device's ability to reject common-mode signals, ensuring more accurate output.

Nominal Supply Voltage / Vsup (V): 6

A nominal supply voltage of 6V allows for flexibility in system design, matching the requirements of a wide range of applications.

Power Supplies (V): +-2.5/+-6

Supports a variety of power supply configurations, making it adaptable to various circuit designs.

No. of Terminals: 8

The 8-terminal configuration provides enough connectivity for most applications while keeping the design compact.

Package Style (Meter): SMALL OUTLINE

The small-outline package style minimizes space on the PCB, essential for compact electronic designs.

Minimum Slew Rate: 23 V/us

A minimum slew rate of 23 V/us enables the op-amp to respond quickly to changes in input, critical for high-speed applications.

Maximum Supply Voltage Limit: 7 V

Allows the device to operate effectively under a larger range of power supply conditions without risking damage.

Maximum Operating Temperature: 85 °C

Rated for high temperatures, making it suitable for industrial and high-heat environments.

Maximum Bias Current (IIB) @25°C: 15 uA

A low bias current helps to maintain low distortion in signal amplification, crucial for audio and RF applications.

Frequency Compensation: YES (AVCL>=2)

Frequency compensation ensures stable operation across a range of frequencies, improving overall performance.

Minimum Voltage Gain: 5000

A minimum voltage gain of 5000 enables significant amplification of weak input signals, enhancing overall system sensitivity.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this op-amp can function in extreme cold, expanding application possibilities.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish ensures excellent electrical connectivity and corrosion resistance for durable performance.

Terminal Position: DUAL

The dual terminal position design facilitates easier routing on PCBs, making it more versatile in layout.

Maximum Seated Height: 1.75 mm

A low profile aids in compact designs where space is a premium, making it ideal for portable devices.

Width: 3.9 mm

A narrow width enhances layout flexibility while maintaining a compact form factor.

Length: 4.9 mm

Compact length allows it to fit into smaller circuit boards without compromising functionality.

Power: YES

The device is designed to support power applications, making it versatile for various operational amplifier needs.

Temperature Grade: INDUSTRIAL

Being rated for industrial temperatures means it is reliable in durable applications and harsh environments.

Maximum Negative Supply Voltage Limit: -7 V

This capability allows for greater flexibility in circuit design, especially in bipolar power applications.

Nominal Unity Gain Bandwidth: 130000 kHz

A high unity gain bandwidth indicates suitability for high-frequency applications, such as RF designs.

Technology: BIPOLAR

Utilizing bipolar technology enhances performance in terms of speed and linearity, making it ideal for a variety of analog circuits.

Terminal Form: GULL WING

The gull wing terminal form provides stability during soldering and enhances automated assembly processes.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it offers great flexibility in design, allowing it to be used in multiple configurations.

Nominal Negative Supply Voltage (Vsup): -6 V

Allows designs that require negative voltage supply configurations, making it versatile across applications.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture is well-suited for a variety of applications including filtering and signal conditioning.

Packing Method: TAPE AND REEL

The tape and reel packaging method is ideal for automated assembly, improving production efficiency.

Nominal Slow Rate: 40 V/us

A nominal slow rate of 40 V/us allows for controlled signal transitions, beneficial in precision applications.

Terminal Pitch: 1.27 mm

A 1.27 mm terminal pitch offers compatibility with standard PCB designs while ensuring a solid connection.

Wideband: YES

Its wideband capability is perfect for applications requiring bandwidth beyond typical limits, such as high-speed data processing.

Technical Specifications

Operational Amplifiers (Op Amps) TS613IDWT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±2.5/±6 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

Yes

Frequency Compensation:

YES (AVCL>=2)

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

Yes

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

130 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

108 dB

Input Offset Voltage Limit:

10000 uV

Minimum Voltage Gain:

5000

Minimum Slew Rate:

23 V/us

Nominal Slew Rate:

40 V/us

Peak Bias Current:

30 uA

Maximum Bias Current (IIB) @25 °C:

15 uA

Operational Characteristics

Nominal Supply Voltage:

6 V

Maximum Supply Voltage:

7 V

Maximum Negative Supply Voltage:

-6 V

Minimum Negative Supply Voltage:

-7 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS613IDWT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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