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TS27M2AMD

STMicroelectronics

TS27M2AMD by STMicroelectronics

TS27M2AMD by STMicroelectronics is a CMOS operational amplifier with 2 functions, offering low bias current of 0.0003 uA and high common mode rejection ratio of 80 dB. Ideal for military applications due to its micropower consumption, wide temperature range (-55 to 125 °C), and small outline package design.

Median Price

-

Lifecycle Status

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3

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1k+

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Vyrian

USA . 8,207 parts In-Stock

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Digiode

USA . 2,136 parts In-Stock

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Anansix

USA . 96 parts In-Stock

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IDEA Electronic Components Group

UK . 671 parts In-Stock

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$1.693

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$1.524

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671

$1.693

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Microchip USA

USA . 365 parts In-Stock

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$2.842

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365

$2.842

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MKK Technologies

India . 921 parts In-Stock

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$3.183

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DigiPath Technology Company

USA . 921 parts In-Stock

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$3.183

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AZTECH Wire

Italy . 772 parts In-Stock

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$14.260

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Vigor

Singapore . 4,550 parts In-Stock

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Corphita

USA . 4,227 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,525 parts In-Stock

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Parana Technologies

USA . 582 parts In-Stock

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$2.024

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Overview

Experience superior performance and reliability with the TS27M2AMD operational amplifier by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-quality components for a wide range of applications. The TS27M2AMD offers customers exceptional value, benefits, and advantages with its low bias current, high common mode rejection ratio, and micropower technology. Ideal for military-grade equipment, this amplifier ensures precision and efficiency in your designs. Trust STMicroelectronics to provide the quality you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it ideal for various applications.

Maximum Input Offset Voltage: 6500 uV

The low input offset voltage ensures high precision and accuracy in signal amplification and processing.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB assembly, saving time and effort during installation.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio ensures minimal interference from external signals, resulting in cleaner output signals.

Minimum Voltage Gain: 10000

High minimum voltage gain ensures efficient signal amplification, making this amplifier suitable for applications requiring high gain.

Frequency Compensation: YES

Frequency compensation feature helps improve stability and performance of the amplifier over a range of frequencies.

Technology: CMOS

CMOS technology offers low power consumption and high input impedance, making the amplifier suitable for battery-powered applications and sensitive circuits.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, this product is versatile and can be used in various analog signal processing applications such as filtering, amplification, and signal conditioning.

Technical Specifications

Operational Amplifiers (Op Amps) TS27M2AMD attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

0.6 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

600 μA

Physical Characteristics

Length:

0.193 in (4.9 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

TS27M2AMD Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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