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TS27L4AID

STMicroelectronics

TS27L4AID by STMicroelectronics

TS27L4AID by STMicroelectronics is a CMOS Operational Amplifier with 4 functions, offering low bias and micropower features. It has a max input offset voltage of 6500 uV, nominal unity gain bandwidth of 100 kHz, and operates in automotive temperature grade applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,196 parts In-Stock

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Anansix

USA . 2,083 parts In-Stock

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2,083

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Digiode

USA . 1,257 parts In-Stock

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1,257

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Elcom Components

USA . 20 parts In-Stock

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20

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Microchip USA

USA . 406 parts In-Stock

1+ parts

$1.505

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406

$1.505

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Vigor

Singapore . 1,935 parts In-Stock

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$2.010

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$2.010

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IDEA Electronic Components Group

UK . 2,143 parts In-Stock

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$4.586

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$4.128

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$4.586

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$4.128

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Ampacity Inc.

Singapore . 1,119 parts In-Stock

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$8.410

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$8.410

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MKK Technologies

India . 738 parts In-Stock

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$8.624

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738

$8.624

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DigiPath Technology Company

USA . 738 parts In-Stock

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$8.624

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738

$8.624

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AZTECH Wire

Italy . 851 parts In-Stock

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$12.480

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851

$12.480

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Component Stockers USA

USA . 352 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 6,048 parts In-Stock

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Parana Technologies

USA . 2,177 parts In-Stock

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$5.484

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Corphita

USA . 1,855 parts In-Stock

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Kepictronics

USA . 380 parts In-Stock

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Perfect Parts

USA . 7 parts In-Stock

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Overview

Experience the unparalleled quality and reliability of STMicroelectronics with the TS27L4AID Operational Amplifier. Designed for a wide range of applications, this versatile op amp offers customers exceptional value with its low bias current and micropower capabilities. Whether you're working on automotive electronics or industrial automation, the TS27L4AID provides the performance and precision you need. Trust in STMicroelectronics to deliver cutting-edge technology that meets your demands.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the operational amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 6500 uV

Low input offset voltage ensures accurate signal processing, making the amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.0003 uA

Low bias current helps in minimizing power consumption and improving the efficiency of the operational amplifier.

Surface Mount: YES

Being surface mountable makes the amplifier easy to integrate onto circuit boards, saving space and simplifying assembly.

Nominal Common Mode Reject Ratio: 80 dB

High common mode rejection ratio helps in reducing interference and noise, ensuring clean and accurate signal processing.

Nominal Supply Voltage / Vsup (V): 10

Nominal supply voltage of 10V provides sufficient power for the amplifier to operate efficiently.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the amplifier can withstand varying environmental conditions and continue to perform reliably.

Low-Bias: YES

Low bias ensures minimal distortion and accurate signal amplification, making the amplifier suitable for high-fidelity audio applications.

Nominal Unity Gain Bandwidth: 100 kHz

The high unity gain bandwidth allows for efficient signal processing and amplification at different frequencies, making the amplifier versatile.

Technical Specifications

Operational Amplifiers (Op Amps) TS27L4AID attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

10 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

40000

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

72 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TS27L4AID Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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