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TS27L4ACDT

STMicroelectronics

TS27L4ACDT by STMicroelectronics

TS27L4ACDT from STMicroelectronics is a micropower operational amplifier featuring a max input offset voltage of 6500 µV, a nominal CMRR of 80 dB, and operates within a supply voltage range of 10-18 V. Ideal for low-power applications, it offers high gain and frequency compensation. Its compact design makes it suitable for space-constrained environments.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,544 parts In-Stock

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9,544

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Digiode

USA . 2,739 parts In-Stock

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Anansix

USA . 2,089 parts In-Stock

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2,089

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IDEA Electronic Components Group

UK . 1,121 parts In-Stock

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$2.146

100+ parts

-

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$1.932

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1,121

$2.146

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$1.932

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Microchip USA

USA . 238 parts In-Stock

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$3.602

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238

$3.602

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MKK Technologies

India . 2,273 parts In-Stock

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$4.036

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2,273

$4.036

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DigiPath Technology Company

USA . 2,273 parts In-Stock

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$4.036

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2,273

$4.036

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AZTECH Wire

Italy . 558 parts In-Stock

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$19.320

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558

$19.320

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Component Stockers USA

USA . 739 parts In-Stock

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$99.990

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739

$99.990

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Vigor

Singapore . 4,747 parts In-Stock

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Corphita

USA . 2,813 parts In-Stock

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Kepictronics

USA . 1,380 parts In-Stock

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Parana Technologies

USA . 839 parts In-Stock

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$2.566

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839

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$2.566

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Overview

Elevate your designs with the TS27L4ACDT from STMicroelectronics, a trusted leader in semiconductor innovation. This advanced operational amplifier combines exceptional precision and low power consumption, making it ideal for diverse applications ranging from signal conditioning to sensor interfacing. With its four-function capability and compact package, you gain flexibility without compromising on performance—perfect for driving efficiency and reliability in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection against environmental factors, making the Op Amp suitable for various applications.

Maximum Input Offset Voltage: 6500 uV

A higher input offset voltage might require calibration in sensitive applications, but this specification is balanced for general operational use.

Maximum Average Bias Current (IIB): 0.00015 uA

Extremely low bias current ensures minimal impact on the operation of high-impedance sources, making it a great choice for precision sensors.

Surface Mount: YES

Surface mount technology facilitates automated assembly and saves PCB space, allowing for compact designs.

No. of Functions: 4

Having four functions in one package increases design flexibility and reduces the overall component count in your application.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient use of space in board layouts and aligns well with surface mount technology requirements.

Nominal Common Mode Reject Ratio: 80 dB

A high common mode reject ratio ensures effective rejection of noise, improving the precision of differential signal processing.

Nominal Supply Voltage / Vsup (V): 10

A nominal supply voltage of 10V allows for compatibility with standard circuits while providing reliable performance.

Power Supplies (V): 10

This allows for easy integration into systems using commonly available power supplies.

No. of Terminals: 14

With 14 terminals, the Op Amp offers sufficient connectivity for various configurations and complex circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint on PCBs while promoting high density in circuit designs.

Maximum Supply Voltage Limit: 18 V

A maximum supply voltage limit of 18 V provides versatility for a range of applications without risk of damage.

Maximum Operating Temperature: 70 °C

An operating temperature of up to 70 °C allows the Op Amp to function reliably in commercial environments.

Frequency Compensation: YES

Integrated frequency compensation simplifies design and enhances stability in operational amplifier configurations.

Minimum Voltage Gain: 45000

A high minimum voltage gain ensures that even small input signals are amplified effectively, making it suitable for low-level applications.

Minimum Operating Temperature: 0 °C

With functionality starting from 0 °C, it is suitable for a variety of outdoor and less controlled environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This quality terminal finish ensures excellent conductivity and reduces the risk of corrosion for enhanced reliability.

Terminal Position: DUAL

Dual terminal positioning allows for flexible layout options and simplifies routing on PCB designs.

Maximum Seated Height: 1.75 mm

A low seated height helps in maintaining a slim profile in compact designs.

Width: 3.9 mm

The narrow width further facilitates high-density circuit designs where space is at a premium.

Micropower: YES

Micropower consumption characteristics make it an energy-efficient choice, ideal for battery-operated devices.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum peak reflow time of 40 seconds ensures compatibility with standard soldering processes while preventing damage.

Peak Reflow Temperature °C: 260

The ability to withstand reflow soldering at 260 °C ensures robust assembly and adherence to manufacturing standards.

Length: 8.65 mm

An optimal length allows for versatile placement in various PCB layouts, further enhancing design adaptability.

Temperature Grade: COMMERCIAL

Designed for commercial applications, it guarantees reliability in everyday conditions encountered in typical usage.

Low-Bias: YES

Low-bias characteristics enhance performance in precision applications, making it suitable for high-accuracy measurement systems.

Nominal Unity Gain Bandwidth: 100 kHz

A nominal unity gain bandwidth of 100 kHz caters to a wide range of signal frequencies, ensuring versatility in applications.

Technology: CMOS

CMOS technology offers low power consumption and high density, making this Op Amp ideal for portable and space-constrained designs.

Terminal Form: GULL WING

Gull wing terminals provide excellent mechanical strength and ease of soldering, contributing to reliable assembly.

Amplifier Type: OPERATIONAL AMPLIFIER

As an operational amplifier, it can be used in a wide variety of applications including signal conditioning, filtering, and mathematical operations.

Maximum Supply Current: 0.068 mA

This low supply current ensures minimal energy consumption in low-power applications, ideal for battery-operated devices.

Architecture: VOLTAGE-FEEDBACK

Voltage-feedback architecture supports a wide range of applications while providing stable performance.

Packing Method: TAPE AND REEL

The tape and reel packing method enables efficient handling and automatic assembly, reducing manufacturing time.

Nominal Slow Rate: 0.04 V/us

A low slow rate makes it suitable for use in applications where signal integrity and stability are paramount, such as precision analog systems.

Terminal Pitch: 1.27 mm

The 1.27 mm terminal pitch is standard for many PCB designs, making integration seamless with existing layouts.

Technical Specifications

Operational Amplifiers (Op Amps) TS27L4ACDT attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

10 V

Total Functions:

4

Sub-Category:

Operational Amplifiers

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

45000

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

150 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Lowest Operating Temperature:

0 °C (32 °F)

Maximum Operating Temperature:

70 °C (158 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

40 s

Maximum Supply Current:

68 μA

Physical Characteristics

Length:

0.341 in (8.65 mm)

Width:

0.154 in (3.9 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

14

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP14,.25

Trade Compliance

TS27L4ACDT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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