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TS27L2AIN

STMicroelectronics

TS27L2AIN by STMicroelectronics

TS27L2AIN by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 6500 µV and low bias current of 0.0003 µA. It operates within -40 °C to 125°C, making it ideal for automotive applications. With a nominal gain of 40000 and supply voltage up to 18 V, it's perfect for precision tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 12,394 parts In-Stock

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Digiode

USA . 3,007 parts In-Stock

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3,007

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Anansix

USA . 1,293 parts In-Stock

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1,293

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ECAB

Sweden . 448 parts In-Stock

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448

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Q Components

USA . 130 parts In-Stock

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130

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 453 parts In-Stock

1+ parts

$2.897

100+ parts

-

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$2.607

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453

$2.897

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$2.607

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MKK Technologies

India . 764 parts In-Stock

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$5.448

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764

$5.448

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DigiPath Technology Company

USA . 764 parts In-Stock

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$5.448

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764

$5.448

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AZTECH Wire

Italy . 916 parts In-Stock

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$15.650

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916

$15.650

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Microchip USA

USA . 135 parts In-Stock

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$32.431

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$32.431

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A-Z Elektronik GmbH

Germany . 6,594 parts In-Stock

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Vigor

Singapore . 4,088 parts In-Stock

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Corphita

USA . 3,558 parts In-Stock

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Infinite Electronics LLP (Excess)

. 3,508 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Parana Technologies

USA . 1,644 parts In-Stock

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$3.464

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$3.464

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Perfect Parts

USA . 469 parts In-Stock

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469

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Overview

Elevate your designs with the TS27L2AIN operational amplifier from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality op-amp combines exceptional performance with low power consumption, making it ideal for automotive and precision applications. With its robust temperature range and impressive common-mode rejection, you can trust the TS27L2AIN to enhance your projects while benefiting from ST's reliability and expertise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making the op-amp suitable for various applications.

Maximum Input Offset Voltage: 6500 uV

A maximum input offset voltage of 6500 µV ensures lower distortion in signals, making it ideal for precision applications.

Maximum Average Bias Current (IIB): 0.0003 uA

This low bias current contributes to greater efficiency and lower offset errors, enhancing the device's performance in low-power applications.

No. of Functions: 2

Having multiple functions allows for versatility in design, making it a convenient choice for engineers looking to simplify circuit layouts.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various layouts and designs, optimizing space on a PCB.

Nominal Common Mode Reject Ratio: 80 dB

An 80 dB common mode reject ratio helps in rejecting noise and interference, resulting in cleaner output signals in noisy environments.

Nominal Supply Voltage / Vsup (V): 10

A nominal supply voltage of 10V provides a good balance between performance and energy consumption, making it suitable for a variety of applications.

Power Supplies (V): 5/10

The dual supply options facilitate versatility in design, accommodating diverse power requirements across applications.

No. of Terminals: 8

With 8 terminals, this op-amp allows for greater connectivity and flexibility in circuit design.

Package Style (Meter): IN-LINE

The in-line package style simplifies placement and soldering on PCBs, enhancing manufacturability.

Maximum Supply Voltage Limit: 18 V

An 18V maximum supply voltage limit provides a wide operational range, allowing for use in high-voltage applications.

Maximum Operating Temperature: 125 °C

Operating at high temperatures up to 125 °C makes this op-amp reliable for automotive and industrial applications.

Frequency Compensation: YES

Built-in frequency compensation ensures stability and improved performance in various operational conditions.

Minimum Voltage Gain: 40000

A high voltage gain of 40000 allows for substantial amplification of input signals, making it suitable for sensitive applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, it is well-suited for extreme environments, particularly in automotive and outdoor applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and reduces oxidation, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and layout, enhancing design options for engineers.

Maximum Seated Height: 5.08 mm

A low seated height of 5.08 mm allows for compact designs where space is a premium, facilitating efficient PCB layouts.

Width: 7.62 mm

The 7.62 mm width supports compatibility with a variety of board designs and component placements.

Micropower: YES

Micropower functionality enables low power consumption, making the op-amp ideal for battery-operated devices.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this component meets stringent performance metrics required in demanding environments.

Low-Bias: YES

Low-bias characteristics improve the accuracy in high-precision applications, ensuring reliable signal integrity.

Maximum Negative Supply Voltage Limit: 0 V

This specification helps avoid negative voltage issues, ensuring a safer operation in various circuit designs.

Nominal Negative Supply Voltage (Vsup): 0 V

Operating at zero negative supply voltage can simplify power supply design in various applications.

Nominal Unity Gain Bandwidth: 100 kHz

A unity gain bandwidth of 100 kHz allows for significant versatility in frequency-domain applications.

Technology: CMOS

The CMOS technology enhances power efficiency and allows for compact designs, suitable for modern electronic applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical strength and are effective for prototyping and custom circuit applications.

Amplifier Type: OPERATIONAL AMPLIFIER

Being an operational amplifier, it is versatile for various analog applications, including signal conditioning and filtering.

Maximum Supply Current: 0.036 mA

The low maximum supply current enhances battery life in portable devices, making it ideal for energy-sensitive applications.

Nominal Slow Rate: 0.04 V/us

A nominal slew rate of 0.04 V/µs balances speed and stability, suitable for many signal processing tasks.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm standardizes component placement and promotes compatibility with various PCBs.

Technical Specifications

Operational Amplifiers (Op Amps) TS27L2AIN attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from STMicroelectronics

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

5/10 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

Yes

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

100 kHz

Nominal Common Mode Rejection Ratio (CMRR ):

80 dB

Input Offset Voltage Limit:

6500 uV

Minimum Voltage Gain:

40000

Nominal Slew Rate:

0.04 V/us

Peak Bias Current:

300 pA

Operational Characteristics

Nominal Supply Voltage:

10 V

Maximum Supply Voltage:

18 V

Maximum Negative Supply Voltage:

0 V

Minimum Negative Supply Voltage:

0 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Maximum Supply Current:

36 μA

Physical Characteristics

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.2 in (5.08 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

TS27L2AIN Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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