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TD352IN

STMicroelectronics

TD352IN by STMicroelectronics

TD352IN by STMicroelectronics is a robust MOSFET gate driver designed for automotive applications, featuring a max supply voltage of 26V and built-in protections against overcurrent and undervoltage. It operates efficiently with a turn-on time of just 2.2µs. This device supports dual terminal configurations, ensuring reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,077 parts In-Stock

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4,077

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Vyrian

USA . 2,648 parts In-Stock

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2,648

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Anansix

USA . 1,245 parts In-Stock

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1,245

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IDEA Electronic Components Group

UK . 1,260 parts In-Stock

1+ parts

$1.948

100+ parts

-

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$1.753

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1,260

$1.948

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$1.753

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Microchip USA

USA . 484 parts In-Stock

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$3.134

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484

$3.134

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MKK Technologies

India . 154 parts In-Stock

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$3.662

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154

$3.662

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DigiPath Technology Company

USA . 154 parts In-Stock

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$3.662

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154

$3.662

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AZTECH Wire

Italy . 811 parts In-Stock

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$11.100

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811

$11.100

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QUARKTWIN TECHNOLOGY LTD

USA . 19,395 parts In-Stock

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Corphita

USA . 2,013 parts In-Stock

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Parana Technologies

USA . 1,773 parts In-Stock

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$2.329

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$2.329

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Perfect Parts

USA . 1,649 parts In-Stock

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1,649

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Overview

Unlock unparalleled performance and reliability with the TD352IN from STMicroelectronics, a leader in cutting-edge semiconductor solutions. This robust MOSFET gate driver is designed for automotive applications, ensuring optimal efficiency even in extreme temperatures. With built-in protections against overcurrent and undervoltage, it delivers peace of mind alongside high-speed operation. Elevate your projects with ST's commitment to quality and innovation, transforming your designs into powerful, dependable systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and resistance to environmental factors, making the product suitable for various applications.

Maximum Supply Voltage: 26 V

With a maximum supply voltage of 26 V, this driver can handle higher voltage applications, providing flexibility in design.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of PCB space and ease of integration into different layouts.

Built-in Protections: OVER CURRENT; UNDER VOLTAGE

The built-in protections enhance reliability by safeguarding against overcurrent and undervoltage conditions, ensuring safety for your applications.

Power Supplies (V): 16

A nominal power supply of 16 V ensures compatibility with common automotive and industrial systems, making it a versatile choice.

No. of Terminals: 8

With 8 terminals, this driver provides sufficient connections for complex configurations while maintaining compactness.

Package Style (Meter): IN-LINE

The in-line package style promotes ease of handling and solderability, making assembly more efficient.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C enables the driver to function reliably in demanding environments, particularly in automotive applications.

Minimum Operating Temperature: -40 °C

The capability to operate at a minimum temperature of -40 °C ensures functionality in extreme cold conditions, ideal for automotive uses.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good solderability and reduces oxidation, contributing to longer-term reliability.

Terminal Position: DUAL

The dual terminal position facilitates versatile mounting options, allowing designers more flexibility in layout.

Width: 7.62 mm

At a width of 7.62 mm, the driver is compact enough for space-constrained applications without sacrificing performance.

Temperature Grade: AUTOMOTIVE

Designed for automotive temperature grades, this driver is engineered for reliability and durability in car applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers strong mechanical support and ease of repair, making it user-friendly for assembly.

Nominal Supply Voltage: 16 V

The nominal supply voltage further confirms compatibility with mainstream systems, enhancing integration into existing designs.

Turn-on Time: 2.2 us

A turn-on time of 2.2 μs means quick response to signals, making this driver suitable for high-speed applications.

Terminal Pitch: 2.54 mm

With a terminal pitch of 2.54 mm, this driver is compatible with standard PCB layouts, simplifying the design process.

Interface IC Type: HALF BRIDGE BASED PERIPHERAL DRIVER

As a half-bridge based driver, it is ideally suited for driving MOSFETs in various applications, providing excellent control over power management.

Turn-off Time: 0.4 us

The fast turn-off time of 0.4 μs ensures efficient switching characteristics, reducing power losses in the system.

Output Current Flow Direction: SOURCE AND SINK

Supporting both source and sink current flow allows for flexible circuit designs, accommodating various configurations in power management.

Technical Specifications

MOSFET Gate Drivers TD352IN attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

Built-in Protections:

OVER CURRENT; UNDER VOLTAGE

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

16

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

26 V

Nominal Supply Voltage:

16 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.4 us

Turn-on Time:

2.2 us

Width:

7.62 mm

Trade Compliance

TD352IN Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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