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TD350IDT

STMicroelectronics

TD350IDT by STMicroelectronics

TD350IDT by STMicroelectronics is a high-side MOSFET gate driver designed for automotive applications, supporting a max supply voltage of 26V and operating temp from -40 °C to 125 °C. It features a compact SO package with 14 terminals and delivers up to 1.5A peak output current. Ideal for efficient power management in half-bridge configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,626 parts In-Stock

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3,626

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Vyrian

USA . 2,837 parts In-Stock

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2,837

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Anansix

USA . 1,840 parts In-Stock

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1,840

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 340 parts In-Stock

1+ parts

$6.949

100+ parts

-

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340

$6.949

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IDEA Electronic Components Group

UK . 2,079 parts In-Stock

1+ parts

$8.090

100+ parts

-

1k+ parts

$7.281

10k+ parts

-

2,079

$8.090

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$7.281

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Ampacity Inc.

Singapore . 488 parts In-Stock

1+ parts

$11.500

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-

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488

$11.500

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MKK Technologies

India . 2,373 parts In-Stock

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$15.212

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2,373

$15.212

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DigiPath Technology Company

USA . 2,373 parts In-Stock

1+ parts

$15.212

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2,373

$15.212

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AZTECH Wire

Italy . 1,033 parts In-Stock

1+ parts

$18.390

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1,033

$18.390

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Perfect Parts

USA . 32,132 parts In-Stock

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32,132

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Corphita

USA . 3,762 parts In-Stock

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3,762

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 244 parts In-Stock

1+ parts

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100+ parts

$9.672

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244

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$9.672

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Overview

Unlock unmatched performance with the TD350IDT from STMicroelectronics, a leading name in innovation. This advanced MOSFET gate driver is designed for diverse applications, ensuring reliability from automotive to industrial sectors. With its robust temperature range and compact design, it delivers superior efficiency and responsiveness, empowering your projects with enhanced control and reduced power loss. Trust in ST's legacy of quality and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures the product is lightweight and resistant to environmental stresses, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact PCB design and automatic assembly, improving production efficiency.

Maximum Supply Voltage: 26 V

A higher maximum supply voltage provides design flexibility and the capability to handle a wider range of applications.

Package Shape: RECTANGULAR

The rectangular shape allows efficient use of PCB space and easy integration into various circuit layouts.

Power Supplies (V): -10,16

This wide range of power supplies accommodates diverse circuit configurations and enhances compatibility with different systems.

No. of Terminals: 14

Having 14 terminals allows for multiple connections, facilitating complex circuit designs while ensuring robust performance.

Package Style (Meter): SMALL OUTLINE

The small outline package offers a compact footprint, ideal for space-constrained applications.

Minimum Supply Voltage: 9 V

This minimum supply voltage enables operation in lower voltage applications, enhancing versatility.

Maximum Operating Temperature: 125 °C

A high operating temperature rating ensures reliability in challenging thermal environments, especially in automotive applications.

Minimum Operating Temperature: -40 °C

This specification allows the product to function in extremely low temperatures, making it suitable for use in harsh climates.

Terminal Finish: NICKEL PALLADIUM GOLD

The high-quality terminal finish offers excellent conductivity and resistance to corrosion, ensuring longevity and performance.

Terminal Position: DUAL

Dual terminal position supports easy integration and improved routing options on printed circuit boards.

Maximum Seated Height: 1.75 mm

A low seated height reduces the overall height of the assembly, allowing for slimmer designs in compact devices.

Width: 3.9 mm

The narrow width is beneficial for dense layouts, optimizing space efficiency on PCBs.

High Side Driver: YES

The inclusion of a high side driver is essential for many power management applications, improving system efficiency.

Length: 8.65 mm

This length contributes to the compactness of the device, facilitation placement in tight spaces.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures reliability and performance in demanding automotive environments.

Technology: BICMOS

BICMOS technology combines the benefits of bipolar and CMOS, resulting in high-speed operation and low power consumption.

Terminal Form: GULL WING

Gull wing terminals provide reliable solder joints and are well-suited for automated assembly processes.

Nominal Supply Voltage: 16 V

The nominal supply voltage is ideal for optimal performance, making it suitable for a wide range of applications.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for dense placement while maintaining manufacturability in surface mount technology.

Nominal Output Peak Current Limit: 1.5 A

The 1.5 A peak current capability enhances the driver's performance and allows it to handle various load conditions effectively.

Interface IC Type: HALF BRIDGE BASED IGBT/MOSFET DRIVER

The half bridge configuration is advantageous for driving IGBTs and MOSFETs, enabling efficient power conversion in applications.

Technical Specifications

MOSFET Gate Drivers TD350IDT attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Power Supplies (V):

-10,16

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

26 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

16 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

TD350IDT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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