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TD351IN

STMicroelectronics

TD351IN by STMicroelectronics

TD351IN by STMicroelectronics is a robust MOSFET gate driver designed for automotive applications, featuring a max supply voltage of 26V and built-in protections against overcurrent and undervoltage. It operates efficiently with a turn-on time of just 2.2µs. This device supports dual terminal configurations, ensuring reliable performance in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,029 parts In-Stock

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7,029

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Anansix

USA . 2,034 parts In-Stock

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2,034

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Digiode

USA . 120 parts In-Stock

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120

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MISTER SPROCKETS

USA . 50 parts In-Stock

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50

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Zilex Electronics Inc.

Canada . 41 parts In-Stock

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41

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ABC Electronics Ltd.

UK . 26 parts In-Stock

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26

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,987 parts In-Stock

1+ parts

$6.469

100+ parts

-

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$5.822

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1,987

$6.469

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$5.822

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Microchip USA

USA . 241 parts In-Stock

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$9.094

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241

$9.094

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AZTECH Wire

Italy . 712 parts In-Stock

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$9.330

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712

$9.330

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MKK Technologies

India . 1,632 parts In-Stock

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$12.165

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1,632

$12.165

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DigiPath Technology Company

USA . 1,632 parts In-Stock

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$12.165

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1,632

$12.165

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Perfect Parts

USA . 3,188 parts In-Stock

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3,188

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Corphita

USA . 2,520 parts In-Stock

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2,520

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Parana Technologies

USA . 2,369 parts In-Stock

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$7.735

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2,369

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$7.735

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Overview

Elevate your designs with the TD351IN from STMicroelectronics, a top-tier MOSFET gate driver engineered for excellence. Renowned for its reliability and performance, STMicroelectronics ensures superior quality that stands the test of time. With robust built-in protections and an impressive operational temperature range, the TD351IN is ideal for automotive applications, providing unmatched efficiency and peace of mind—your go-to solution for innovative power management!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides a balance of durability and lightweight construction, making it suitable for various applications.

Maximum Supply Voltage: 26 V

With a maximum supply voltage of 26 V, this driver can effectively handle higher voltage applications, ensuring reliability.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of board space, making it easier to integrate into designs.

Built-in Protections: OVER CURRENT; UNDER VOLTAGE

The built-in protections against over-current and under-voltage enhance safety and longevity of the device, reducing the risk of failure.

Power Supplies (V): 16

Operating at a supply voltage of 16 V ensures compatibility with a wide range of power supply systems, simplifying design.

No. of Terminals: 8

The 8 terminal configuration facilitates versatile connections and allows for easy integration into various circuit designs.

Package Style (Meter): IN-LINE

The in-line package style is easy to mount and often preferred in automotive applications, ensuring adaptability.

Maximum Operating Temperature: 125 °C

The operating temperature of up to 125 °C makes this product suitable for high-heat environments, ideal for automotive applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this component is reliable in extreme cold, ensuring performance in diverse climates.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and resistance to oxidation, ensuring reliable electrical connections.

Terminal Position: DUAL

The dual terminal position enhances layout flexibility and simplifies PCB design, allowing for better space management.

Width: 7.62 mm

At 7.62 mm wide, this driver maintains a compact profile, making it easy to fit into space-constrained applications.

Temperature Grade: AUTOMOTIVE

Being rated for automotive temperature grade assures users that it's designed for rigorous automotive standards and conditions.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, offering enhanced durability compared to surface mount options.

Nominal Supply Voltage: 16 V

A nominal supply voltage of 16 V ensures stable operation in regulated environments, reducing the risk of performance issues.

Turn-on Time: 2.2 us

Fast turn-on time of 2.2 µs contributes to improved efficiency and responsiveness in switching applications.

Terminal Pitch: 2.54 mm

The 2.54 mm terminal pitch standardizes placement on PCBs, allowing for easy integration and interchangeability with other components.

Interface IC Type: HALF BRIDGE BASED PERIPHERAL DRIVER

Being a half bridge based peripheral driver makes this device highly suitable for driving motors, enhancing its application flexibility.

Turn-off Time: 0.4 us

A quick turn-off time of 0.4 µs supports high-frequency applications, improving switching efficiency and reducing heat generation.

Output Current Flow Direction: SOURCE AND SINK

The ability to source and sink current provides versatile control capabilities in various load conditions, enhancing overall performance.

Technical Specifications

MOSFET Gate Drivers TD351IN attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

Built-in Protections:

OVER CURRENT; UNDER VOLTAGE

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

16

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

26 V

Nominal Supply Voltage:

16 V

Surface Mount:

NO

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.4 us

Turn-on Time:

2.2 us

Width:

7.62 mm

Trade Compliance

TD351IN Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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