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TD221ID

STMicroelectronics

TD221ID by STMicroelectronics

TD221ID by STMicroelectronics is a high-side MOSFET gate driver with a max supply voltage of 17V and operates b/w -25 °C to 125 °C. It features an output peak current limit of 1A, making it ideal for efficient power management in compact applications. Its small outline package ensures easy surface mounting in space-constrained designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,337 parts In-Stock

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7,337

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Anansix

USA . 2,713 parts In-Stock

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2,713

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Digiode

USA . 857 parts In-Stock

1+ parts

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857

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J2 Sourcing AB

Sweden . 65 parts In-Stock

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65

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 221 parts In-Stock

1+ parts

$2.743

100+ parts

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221

$2.743

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IDEA Electronic Components Group

UK . 369 parts In-Stock

1+ parts

$6.129

100+ parts

-

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$5.516

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369

$6.129

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$5.516

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MKK Technologies

India . 26 parts In-Stock

1+ parts

$11.525

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26

$11.525

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DigiPath Technology Company

USA . 26 parts In-Stock

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$11.525

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26

$11.525

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AZTECH Wire

Italy . 1,054 parts In-Stock

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$11.580

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1,054

$11.580

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Component Stockers USA

USA . 749 parts In-Stock

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$99.990

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749

$99.990

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Corphita

USA . 2,770 parts In-Stock

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2,770

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Perfect Parts

USA . 1,935 parts In-Stock

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1,935

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Parana Technologies

USA . 381 parts In-Stock

1+ parts

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$7.328

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381

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$7.328

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Overview

Unlock unparalleled performance with the TD221ID from STMicroelectronics, a leader in innovation and reliability. This high-quality MOSFET gate driver excels in diverse applications, delivering superior efficiency and thermal management. With a compact design and robust features, it ensures seamless integration while enhancing system responsiveness. Experience the perfect blend of durability and precision, empowering your projects with unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protects the internal components from environmental factors, making it highly reliable for various applications.

Surface Mount: YES

Surface mount capability allows for compact designs and easier assembly, making it ideal for modern PCB layouts where space is a constraint.

Maximum Supply Voltage: 17 V

A maximum supply voltage of 17 V provides flexibility for high-voltage applications, ensuring compatibility with a wide range of systems.

Package Shape: RECTANGULAR

The rectangular shape is advantageous for efficient layout and space optimization on printed circuit boards.

No. of Terminals: 8

With 8 terminals, this driver can efficiently connect various functionalities while remaining compact, facilitating ease of integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it a suitable choice for space-constrained applications, promoting miniaturization without compromising performance.

Minimum Supply Voltage: 7.8 V

A minimum supply voltage of 7.8 V allows it to operate in lower voltage environments, making it versatile for use in various electronic circuits.

Maximum Operating Temperature: 125 °C

The ability to operate at temperatures up to 125 °C ensures reliable performance in high-temperature environments, increasing its applicability in harsh conditions.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25 °C, this product is suitable for outdoor and industrial applications where temperature fluctuations are common.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish enhances conductivity and ensures reliable electrical connections, reducing the risk of failures due to corrosion.

Terminal Position: DUAL

The dual terminal position improves layout flexibility and makes routing easier on the PCB, ensuring better performance and easier assembly.

Maximum Seated Height: 1.75 mm

A maximum seated height of 1.75 mm allows for low-profile designs, which are critical in space-optimized applications.

Width: 3.9 mm

A width of 3.9 mm contributes to a compact design, fitting easily into congested PCB layouts without taking up excessive space.

High Side Driver: YES

Being a high side driver means it can efficiently drive loads connected to the high side of the power supply, suitable for various applications, including motor control.

Length: 4.9 mm

The short length enhances compatibility for densely packed layouts while maintaining electrical performance.

Terminal Form: GULL WING

The gull wing terminal form provides a reliable mechanical connection while facilitating easy soldering, ensuring a robust assembly.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for efficient spacing between terminals, making it easier to handle during assembly and soldering processes.

Nominal Output Peak Current Limit: 1 A

The nominal output peak current limit of 1 A ensures the driver can meet the demands of many applications while protecting the device from damage due to overload.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Being a buffer or inverter based driver, it provides high-speed switching and improves system performance, suitable for high-frequency applications.

Technical Specifications

MOSFET Gate Drivers TD221ID attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

7.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

TD221ID Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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