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TD220ID

STMicroelectronics

TD220ID by STMicroelectronics

TD220ID by STMicroelectronics is a high-side MOSFET gate driver with a max supply voltage of 17V and operates b/w -25 °C to 125 °C. It features an output peak current limit of 1A and comes in a compact SOIC-8 package. Ideal for efficient power management applications.

Median Price

$1.410

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,906 parts In-Stock

1+ parts

$1.410

100+ parts

$0.828

1k+ parts

$0.723

10k+ parts

-

1,906

$1.410

$0.828

$0.723

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,286 parts In-Stock

1+ parts

$1.577

100+ parts

-

1k+ parts

-

10k+ parts

-

2,286

$1.577

-

-

-

Vyrian

USA . 1,142 parts In-Stock

1+ parts

$1.660

100+ parts

-

1k+ parts

-

10k+ parts

-

1,142

$1.660

-

-

-

Elcom Components

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,800

-

-

-

-

Anansix

USA . 1,263 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,263

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 477 parts In-Stock

1+ parts

$1.494

100+ parts

-

1k+ parts

-

10k+ parts

-

477

$1.494

-

-

-

IDEA Electronic Components Group

UK . 1,636 parts In-Stock

1+ parts

$13.374

100+ parts

-

1k+ parts

$12.037

10k+ parts

-

1,636

$13.374

-

$12.037

-

MKK Technologies

India . 907 parts In-Stock

1+ parts

$25.149

100+ parts

-

1k+ parts

-

10k+ parts

-

907

$25.149

-

-

-

DigiPath Technology Company

USA . 907 parts In-Stock

1+ parts

$25.149

100+ parts

-

1k+ parts

-

10k+ parts

-

907

$25.149

-

-

-

Authorized Procurement Solutions

USA . 500,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500,000

-

-

-

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Kepictronics

USA . 7,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,738

-

-

-

-

Perfect Parts

USA . 2,157 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,157

-

-

-

-

Parana Technologies

USA . 327 parts In-Stock

1+ parts

-

100+ parts

$15.991

1k+ parts

-

10k+ parts

-

327

-

$15.991

-

-

Overview

Unlock unparalleled performance with the TD220ID from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for robust MOSFET gate driving, this reliable component enhances efficiency in diverse applications such as power management and motor control. With a compact footprint and high-temperature resilience, it ensures seamless operation even in challenging environments. Elevate your projects with the quality and reliability that only STMicroelectronics can deliver!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy offers excellent protection against environmental factors, ensuring durability and reliability in various applications.

Surface Mount: YES

Surface mount design allows for compact PCB layouts and ease of automated assembly, making it suitable for high-density applications.

Maximum Supply Voltage: 17 V

A maximum supply voltage of 17 V provides the flexibility to support various operational requirements without the risk of over-voltage damage.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB, allowing for efficient component placement.

No. of Terminals: 8

Having 8 terminals simplifies connections while maintaining adequate functionality, making integration easier.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for low-profile applications while maximizing board space.

Minimum Supply Voltage: 7.8 V

A minimum supply voltage of 7.8 V ensures compatibility with a wide range of systems, enhancing versatility.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the driver to function in demanding environments without performance degradation.

Minimum Operating Temperature: -25 °C

With a minimum operating temperature of -25 °C, this driver is suitable for applications in harsh conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish improves conductivity and resistance to corrosion, ensuring long-term reliability.

Terminal Position: DUAL

Dual terminal positions facilitate easier layout design and better thermal management in circuit designs.

Maximum Seated Height: 1.75 mm

A maximum seated height of 1.75 mm ensures the product maintains a low profile, suitable for height-constrained applications.

Width: 3.9 mm

A width of 3.9 mm allows for space-efficient designs without compromising on performance.

High Side Driver: YES

As a high side driver, it is capable of switching the load on the high side, which is essential for various power management applications.

Length: 4.9 mm

A compact length of 4.9 mm contributes to space-saving potential, making it ideal for tight layouts.

Terminal Form: GULL WING

Gull wing terminals provide excellent solderability and mechanical stability, enhancing the robustness of connections.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for optimized spacing between terminals, improving routing options on the PCB.

Nominal Output Peak Current Limit: 1 A

An output peak current limit of 1 A enables efficient power handling capabilities for various MOSFET applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

As a buffer or inverter based driver, it enhances signal integrity and switching performance, making it suitable for precise applications.

Technical Specifications

MOSFET Gate Drivers TD220ID attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

7.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

TD220ID Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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