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TD220IDT

STMicroelectronics

TD220IDT by STMicroelectronics

TD220IDT by STMicroelectronics is a high-side MOSFET driver with a max supply voltage of 17V and operates b/w -25 °C to 125 °C. It features an output peak current limit of 1A and comes in a compact SO8 package. Ideal for buffer or inverter applications, it ensures efficient power management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freddi Giovanni

Italy . 10,000 parts In-Stock

1+ parts

-

100+ parts

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10,000

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Vyrian

USA . 4,916 parts In-Stock

1+ parts

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4,916

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Digiode

USA . 2,084 parts In-Stock

1+ parts

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2,084

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Anansix

USA . 1,156 parts In-Stock

1+ parts

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1,156

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 470 parts In-Stock

1+ parts

$3.949

100+ parts

-

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470

$3.949

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-

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IDEA Electronic Components Group

UK . 2,239 parts In-Stock

1+ parts

$11.377

100+ parts

-

1k+ parts

$10.239

10k+ parts

-

2,239

$11.377

-

$10.239

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AZTECH Wire

Italy . 1,056 parts In-Stock

1+ parts

$16.270

100+ parts

-

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1,056

$16.270

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MKK Technologies

India . 1,874 parts In-Stock

1+ parts

$21.393

100+ parts

-

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10k+ parts

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1,874

$21.393

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-

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DigiPath Technology Company

USA . 1,874 parts In-Stock

1+ parts

$21.393

100+ parts

-

1k+ parts

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1,874

$21.393

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Component Stockers USA

USA . 628 parts In-Stock

1+ parts

$99.990

100+ parts

-

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628

$99.990

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

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100+ parts

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15,000

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Kepictronics

USA . 10,724 parts In-Stock

1+ parts

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10,724

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Perfect Parts

USA . 5,600 parts In-Stock

1+ parts

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5,600

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Corphita

USA . 960 parts In-Stock

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960

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Parana Technologies

USA . 595 parts In-Stock

1+ parts

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100+ parts

$13.603

1k+ parts

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10k+ parts

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595

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$13.603

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Overview

Unlock the power of efficient energy management with the TD220IDT from STMicroelectronics, a leader in innovative semiconductor solutions. This robust MOSFET gate driver excels in a wide range of applications, ensuring reliable performance under varying conditions. With its compact design and superior quality, it delivers high efficiency and thermal stability, empowering engineers to enhance system reliability and reduce costs. Choose the TD220IDT for unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and resistance against environmental factors, making the product reliable for long-term use.

Surface Mount: YES

Surface mount capability allows for a smaller footprint on PCBs, enabling compact designs and efficient space usage in electronic applications.

Maximum Supply Voltage: 17 V

A maximum supply voltage of 17 V provides flexibility in various applications, accommodating different voltage requirements.

Package Shape: RECTANGULAR

The rectangular package shape promotes efficient layout and design options for PCB design, allowing better trace routing.

No. of Terminals: 8

Eight terminals provide multiple connection points, facilitating varied circuit configurations and enhanced functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps minimize board space while maintaining connectivity, ideal for space-constrained designs.

Minimum Supply Voltage: 7.8 V

A minimum supply voltage of 7.8 V allows for versatility in circuit designs, providing options for lower voltage applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this driver is suitable for high-temperature environments, enhancing reliability in demanding applications.

Minimum Operating Temperature: -25 °C

The ability to operate down to -25 °C ensures functionality in colder climates, broadening the range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish provides excellent corrosion resistance and ensures reliable electrical connections over time.

Terminal Position: DUAL

Dual terminal position enhances layout flexibility, allowing for optimal placement on the PCB for various design scenarios.

Maximum Seated Height: 1.75 mm

A maximum seated height of 1.75 mm keeps the component close to the PCB, reducing the profile and improving the overall design aesthetics.

Width: 3.9 mm

A width of 3.9 mm ensures compatibility with compact PCB layouts while providing adequate spacing for thermal management.

High Side Driver: YES

Being a high-side driver allows for enhanced control of load switching, which is essential in many power management applications.

Length: 4.9 mm

The small length contributes to a compact design, making it easier to integrate into tight spaces on modern PCB designs.

Terminal Form: GULL WING

The gull wing terminal form facilitates easier soldering and enhances mechanical stability on the circuit board.

Terminal Pitch: 1.27 mm

A terminal pitch of 1.27 mm allows for efficient connections and compatibility with standard PCB layouts.

Nominal Output Peak Current Limit: 1 A

The 1 A peak current limit ensures sufficient drive capability for various MOSFET types, enhancing switching performance.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter-based driver architecture allows for versatile interfacing with different logic levels, making it adaptable for various applications.

Technical Specifications

MOSFET Gate Drivers TD220IDT attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

7.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

TD220IDT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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