Loading...

TD221IDT

STMicroelectronics

TD221IDT by STMicroelectronics

TD221IDT by STMicroelectronics is a high-side MOSFET gate driver with a max supply voltage of 17V and operates b/w -25 °C to 125 °C. It features an output peak current limit of 1A and comes in a compact SO8 package. Ideal for efficient power management applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,566 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,566

-

-

-

-

Digiode

USA . 4,806 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,806

-

-

-

-

Anansix

USA . 1,793 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,793

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 170 parts In-Stock

1+ parts

$3.578

100+ parts

-

1k+ parts

-

10k+ parts

-

170

$3.578

-

-

-

IDEA Electronic Components Group

UK . 1,367 parts In-Stock

1+ parts

$8.778

100+ parts

-

1k+ parts

$7.900

10k+ parts

-

1,367

$8.778

-

$7.900

-

MKK Technologies

India . 2,373 parts In-Stock

1+ parts

$16.506

100+ parts

-

1k+ parts

-

10k+ parts

-

2,373

$16.506

-

-

-

DigiPath Technology Company

USA . 2,373 parts In-Stock

1+ parts

$16.506

100+ parts

-

1k+ parts

-

10k+ parts

-

2,373

$16.506

-

-

-

AZTECH Wire

Italy . 189 parts In-Stock

1+ parts

$19.060

100+ parts

-

1k+ parts

-

10k+ parts

-

189

$19.060

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 23,703 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,703

-

-

-

-

Corphita

USA . 1,979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,979

-

-

-

-

Parana Technologies

USA . 1,461 parts In-Stock

1+ parts

-

100+ parts

$10.495

1k+ parts

-

10k+ parts

-

1,461

-

$10.495

-

-

Overview

Unlock exceptional performance with the TD221IDT from STMicroelectronics, a leader in innovative semiconductor solutions. This high-efficiency MOSFET gate driver excels in reliability and precision, making it perfect for automotive, industrial, and consumer applications. Its robust design ensures optimal operation across a wide temperature range, providing customers with unmatched value and efficiency. Choose TD221IDT to elevate your designs with superior quality and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures protection against environmental factors, enhancing the reliability of the driver.

Surface Mount: YES

Surface mount capability facilitates automated assembly, reducing manufacturing costs and improving production efficiency.

Maximum Supply Voltage: 17 V

The high maximum supply voltage allows for versatile applications in various systems requiring higher voltage operations.

Package Shape: RECTANGULAR

The rectangular form factor provides efficient use of PCB space, making it suitable for compact designs.

No. of Terminals: 8

With 8 terminals, this driver offers a balanced complexity and flexibility for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications while maintaining reliable performance.

Minimum Supply Voltage: 7.8 V

The low minimum supply voltage enables compatibility with a broader range of power supplies, enhancing design flexibility.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature increases reliability in demanding environments, ensuring consistent performance.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures functionality in a wide range of environmental conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish enhances corrosion resistance and ensures excellent electrical contact, boosting overall performance.

Terminal Position: DUAL

Dual terminal positioning allows for more compact layouts and better signal integrity in circuit design.

Maximum Seated Height: 1.75 mm

The low seated height enables efficient integration into low-profile electronic designs, providing design versatility.

Width: 3.9 mm

A narrow width contributes to space savings on PCBs, allowing more components to fit in limited areas.

High Side Driver: YES

As a high-side driver, this product is suited for driving loads above the load ground, making it versatile for various applications.

Length: 4.9 mm

The compact length further supports space-efficient designs, perfect for innovative product development.

Terminal Form: GULL WING

The gull wing terminal form provides excellent solder joint reliability and simplifies PCB assembly processes.

Terminal Pitch: 1.27 mm

A relatively fine terminal pitch allows for dense packing of components while maintaining ease of soldering.

Nominal Output Peak Current Limit: 1 A

With a 1 A peak current limit, this driver can handle substantial load demands, making it suitable for robust applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

This IC type is versatile, enabling various driving configurations, making it adaptable for different design needs.

Technical Specifications

MOSFET Gate Drivers TD221IDT attributes and parameters. Explore more MOSFET Gate Drivers devices from STMicroelectronics

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

7.8 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

TD221IDT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3