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T1030-600W

STMicroelectronics

T1030-600W by STMicroelectronics

STMicroelectronics T1030-600W is a single TRIAC with 10A RMS on-state current and 600V repetitive peak off-state voltage. It operates b/w -40 to 125 °C, ideal for snubberless applications requiring high DC gate trigger current of 30mA. The device features isolated case connection, UL recognized standard, and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,588 parts In-Stock

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4,588

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Digiode

USA . 4,088 parts In-Stock

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4,088

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Anansix

USA . 1,852 parts In-Stock

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1,852

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Lakeland Logistics Inc

USA . 150 parts In-Stock

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150

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Bristol Electronics

USA . 150 parts In-Stock

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150

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,634 parts In-Stock

1+ parts

$3.861

100+ parts

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$3.475

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1,634

$3.861

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$3.475

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$4.856

100+ parts

$4.419

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$3.982

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500

$4.856

$4.419

$3.982

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MKK Technologies

India . 741 parts In-Stock

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$7.261

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741

$7.261

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DigiPath Technology Company

USA . 741 parts In-Stock

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$7.261

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741

$7.261

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AZTECH Wire

Italy . 985 parts In-Stock

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$20.510

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985

$20.510

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Kepictronics

USA . 15,000 parts In-Stock

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Corphita

USA . 4,883 parts In-Stock

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Parana Technologies

USA . 1,377 parts In-Stock

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$4.617

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1,377

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$4.617

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Overview

Enhance your electrical applications with the T1030-600W by STMicroelectronics. This top-of-the-line Triode for Alternating Current (TRIAC) offers unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Whether you're looking to control power in lighting systems, motors, or heating equipment, this product delivers precise performance and efficiency. Say goodbye to voltage fluctuations and hello to smooth operation with the T1030-600W. Upgrade your projects today and experience the difference it makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the triode, making it easy to handle and install.

Maximum DC Gate Trigger Current: 30 mA

Allows for precise control and triggering of the triode, ensuring reliable performance.

Configuration: SINGLE

Simplifies the connections and setup of the triode in circuits, making it user-friendly.

Package Shape: RECTANGULAR

Facilitates efficient placement and mounting of the triode in electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections with other components on circuit boards.

Maximum Leakage Current: 0.01 mA

Ensures minimal power loss and efficient operation of the triode.

No. of Terminals: 3

Provides necessary connection points for input, output, and control signals in the circuit.

Package Style (Meter): FLANGE MOUNT

Offers easy mounting options for the triode in various electronic systems.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments.

Trigger Device Type: SNUBBERLESS TRIAC

Reduces electromagnetic interference and improves the overall performance of the triode.

Minimum Operating Temperature: -40 °C

Allows the triode to function effectively in low-temperature conditions.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures long-term durability of the terminals.

Maximum RMS On-state Current: 10 A

Handles high current loads effectively, making it suitable for various applications.

Maximum DC Gate Trigger Voltage: 1.5 V

Requires low voltage for triggering, enhancing the energy efficiency of the triode.

Case Connection: ISOLATED

Prevents electrical interference and ensures safe operation of the triode.

Repetitive Peak Off-state Voltage: 600 V

Handles high voltage conditions without any damage, ensuring reliability.

Minimum Critical Rate of Rise of Commutation Voltage: 20 V/us

Provides fast and efficient switching capabilities for the triode.

Minimum Critical Rate of Rise of Off-state Voltage: 300 V/us

Ensures quick response and protection against voltage surges for the triode.

Reference Standard: UL RECOGNIZED

Meets safety and quality standards, ensuring a reliable and certified product.

Technical Specifications

Triode For Alternating Current (TRIAC) T1030-600W attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from STMicroelectronics

Specs

Case Connection:

Configuration:

Minimum Critical Rate of Rise of Commutation Voltage:

20 V/us

Minimum Critical Rate of Rise of Off-state Voltage:

300 V/us

Maximum DC Gate Trigger Current:

30 mA

Maximum DC Gate Trigger Voltage:

1.5 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.01 mA

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Qualification:

Not Qualified

Maximum RMS On-state Current:

10 A

Reference Standard:

UL RECOGNIZED

Repetitive Peak Off-state Voltage:

600 V

Sub-Category:

TRIACs

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

Trade Compliance

T1030-600W Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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