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STX690A-AP

STMicroelectronics

STX690A-AP by STMicroelectronics

STX690A-AP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents up to 3A. Its cylindrical package ensures easy integration in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,663 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,663

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-

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Anansix

USA . 1,737 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,737

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-

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Vyrian

USA . 566 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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566

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,536 parts In-Stock

1+ parts

$1.007

100+ parts

-

1k+ parts

$0.907

10k+ parts

-

1,536

$1.007

-

$0.907

-

MKK Technologies

India . 2,331 parts In-Stock

1+ parts

$1.894

100+ parts

-

1k+ parts

-

10k+ parts

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2,331

$1.894

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-

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DigiPath Technology Company

USA . 2,331 parts In-Stock

1+ parts

$1.894

100+ parts

-

1k+ parts

-

10k+ parts

-

2,331

$1.894

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-

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Corphita

USA . 3,539 parts In-Stock

1+ parts

-

100+ parts

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3,539

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-

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Parana Technologies

USA . 2,255 parts In-Stock

1+ parts

-

100+ parts

$1.204

1k+ parts

-

10k+ parts

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2,255

-

$1.204

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Overview

Unlock your project’s potential with the STX690A-AP from STMicroelectronics, a leader in semiconductor innovation. This high-performance NPN transistor is designed for efficient switching, making it ideal for a wide range of applications, from consumer electronics to industrial systems. Crafted with precision and quality, its robust design ensures reliability even in demanding environments. Experience enhanced performance and value that elevate your designs to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and amplification, ensuring this transistor is ideal for a wide range of electronic circuits.

Configuration: SINGLE

Single configuration simplifies integration into circuits and makes design less complex, which is beneficial for many applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it suitable for relays, drivers, and signal processing tasks.

Package Shape: ROUND

The round package shape aids in easy mounting and space optimization on PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are ideal for prototyping and assembly.

No. of Terminals: 3

A simple 3-terminal configuration allows for easy connection and integration into circuits.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle significant power, making it reliable for high-performance applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is easy to work with in various design formats and can improve thermal performance.

Minimum DC Current Gain (hFE): 90

A minimum current gain of 90 indicates effective amplification, allowing for efficient control of larger currents.

Maximum Operating Temperature: 150 °C

High operating temperature rating ensures reliable performance even in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

With a 30 V maximum voltage rating, the transistor is suitable for a wide range of electronic applications.

Transistor Element Material: SILICON

Silicon material ensures excellent semiconductor properties, providing good performance and reliability.

Maximum Collector Current (IC): 3 A

The ability to handle up to 3 A means this transistor can drive substantial loads, making it versatile for various switching and amplification tasks.

Terminal Position: BOTTOM

Bottom terminal positioning aids in efficient heat dissipation and helps maintain compact layouts.

Nominal Transition Frequency (fT): 100 MHz

A transition frequency of 100 MHz allows this transistor to be used in high-speed applications, expanding its usability in modern electronics.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) STX690A-AP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

90

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

STX690A-AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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