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STTA312B

STMicroelectronics

STTA312B by STMicroelectronics

STTA312B by STMicroelectronics is a single rectifier diode with 1200V peak reverse voltage and 3A output current. It features 0.115us reverse recovery time, suitable for high voltage fast soft recovery applications at up to 125 °C operating temperature. The diode has a small outline package with matte tin finish, making it ideal for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 10,132 parts In-Stock

1+ parts

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10,132

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Digiode

USA . 4,012 parts In-Stock

1+ parts

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4,012

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Anansix

USA . 642 parts In-Stock

1+ parts

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642

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,226 parts In-Stock

1+ parts

$0.020

100+ parts

-

1k+ parts

$0.018

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1,226

$0.020

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$0.018

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MKK Technologies

India . 762 parts In-Stock

1+ parts

$0.038

100+ parts

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762

$0.038

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DigiPath Technology Company

USA . 762 parts In-Stock

1+ parts

$0.038

100+ parts

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762

$0.038

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AZTECH Wire

Italy . 916 parts In-Stock

1+ parts

$15.870

100+ parts

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916

$15.870

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Corphita

USA . 248 parts In-Stock

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248

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Parana Technologies

USA . 56 parts In-Stock

1+ parts

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100+ parts

$0.024

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56

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$0.024

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Overview

Experience the superior quality and performance of the STTA312B diode by STMicroelectronics. This single-config diode is perfect for high voltage fast soft recovery applications, offering a maximum output current of 3A and a maximum repetitive peak reverse voltage of 1200V. With a small outline package style and matte tin terminal finish, this diode excels in efficiency and reliability. Trust STMicroelectronics for cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your projects with the STTA312B diode today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies the circuit design and makes installation easier.

Surface Mount: YES

Allows for easy and convenient soldering onto PCBs.

Maximum Reverse Recovery Time: 0.115 us

Enables fast and efficient switching in high voltage applications.

Package Shape: RECTANGULAR

Facilitates easy placement on circuit boards for more efficient use of space.

No. of Terminals: 2

Simplifies the connection process and reduces the risk of errors in wiring.

Package Style (Meter): SMALL OUTLINE

Ideal for space-constrained applications and allows for compact design layouts.

Application: HIGH VOLTAGE FAST SOFT RECOVERY

Suitable for high voltage applications requiring fast and smooth recovery characteristics.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in elevated temperature environments.

Terminal Finish: MATTE TIN

Provides a corrosion-resistant finish for better electrical conductivity.

Terminal Position: SINGLE

Simplifies the installation process and reduces the risk of wiring errors.

Case Connection: CATHODE

Clearly indicates the polarity for easy and correct installation.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying AC voltage to DC for various applications.

Maximum Forward Voltage (VF): 1.8 V

Low forward voltage drop ensures efficient conversion of electrical energy.

Maximum Output Current: 3 A

Capable of handling high currents for demanding applications.

Terminal Form: GULL WING

Allows for easy soldering and secure connection to the PCB.

Maximum Repetitive Peak Reverse Voltage: 1200 V

Suited for high voltage applications with a wide safety margin.

Maximum Non Repetitive Peak Forward Current: 25 A

Can handle short-term high currents without damage.

Diode Element Material: SILICON

Provides good electrical properties and reliability for the diode.

Technical Specifications

Diodes & Rectifiers STTA312B attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, SNUBBER DIODE

Application:

HIGH VOLTAGE FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.8 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Recovery Time:

.115 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTA312B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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