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STTA1206G

STMicroelectronics

STTA1206G by STMicroelectronics

STTA1206G by STMicroelectronics is a single rectifier diode with 600V peak reverse voltage and 12A output current. It features 0.055us reverse recovery time, ideal for high voltage ultra-fast soft recovery applications. With a max power dissipation of 24W and operating temperature of 150 °C, it is suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Martec Srl

Italy . 4,000 parts In-Stock

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4,000

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Vyrian

USA . 3,985 parts In-Stock

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3,985

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Anansix

USA . 2,015 parts In-Stock

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2,015

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Digiode

USA . 503 parts In-Stock

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503

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ComSIT Distribution GmbH

Germany . 49 parts In-Stock

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49

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Corel Iberica Componentes, S.L.

Spain . 49 parts In-Stock

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49

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Sunrise Surplus Inc.

USA . 20 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,601 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

$0.070

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1,601

$0.078

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$0.070

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MKK Technologies

India . 1,508 parts In-Stock

1+ parts

$0.147

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1,508

$0.147

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DigiPath Technology Company

USA . 1,508 parts In-Stock

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$0.147

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1,508

$0.147

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AZTECH Wire

Italy . 773 parts In-Stock

1+ parts

$11.270

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773

$11.270

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Component Stockers USA

USA . 413 parts In-Stock

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$99.990

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413

$99.990

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Perfect Parts

USA . 4,480 parts In-Stock

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4,480

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Corphita

USA . 3,076 parts In-Stock

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3,076

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Parana Technologies

USA . 2,330 parts In-Stock

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$0.094

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2,330

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$0.094

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Assy Fe

Spain . 49 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the STTA1206G by STMicroelectronics. Manufactured with top-quality materials and advanced technology, this diode offers high voltage ultra-fast soft recovery capabilities for a wide range of applications. With a maximum output current of 12A and a maximum repetitive peak reverse voltage of 600V, this rectifier diode ensures optimal efficiency and reliability. Trust STMicroelectronics to deliver cutting-edge solutions that provide value, benefits, and advantages to meet your needs. Upgrade your projects with the STTA1206G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and compact, perfect for applications where size and weight are important factors.

Maximum Reverse Recovery Time: 0.055 us

The ultra-fast reverse recovery time ensures efficient and fast switching operation, making this diode ideal for high-speed applications.

Maximum Power Dissipation: 24 W

With a high power dissipation rating, this diode can handle significant power levels without overheating, ensuring reliable operation under high load conditions.

Maximum Forward Voltage (VF): 1.75 V

The low forward voltage drop of 1.75V minimizes power loss and heat generation, leading to improved efficiency in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this diode to withstand elevated temperatures, making it suitable for demanding industrial environments.

Technical Specifications

Diodes & Rectifiers STTA1206G attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

110 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

24 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.055 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTA1206G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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