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STTA106RL

STMicroelectronics

STTA106RL by STMicroelectronics

STTA106RL by STMicroelectronics is a silicon rectifier diode with a max reverse recovery time of 0.05 µs and can handle up to 600 V peak reverse voltage. It operates at a max temp of 125 °C, making it ideal for high-efficiency power applications. With a compact design, it supports various electronic circuits effectively.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Eagle Technology Solutions

USA . 18,000 parts In-Stock

1+ parts

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18,000

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Vyrian

USA . 4,760 parts In-Stock

1+ parts

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4,760

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Digiode

USA . 1,370 parts In-Stock

1+ parts

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1,370

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Anansix

USA . 614 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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614

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,777 parts In-Stock

1+ parts

$0.155

100+ parts

-

1k+ parts

$0.139

10k+ parts

-

1,777

$0.155

-

$0.139

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MKK Technologies

India . 1,843 parts In-Stock

1+ parts

$0.291

100+ parts

-

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1,843

$0.291

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-

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DigiPath Technology Company

USA . 1,843 parts In-Stock

1+ parts

$0.291

100+ parts

-

1k+ parts

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10k+ parts

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1,843

$0.291

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-

-

Parana Technologies

USA . 1,785 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

-

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1,785

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$0.185

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Corphita

USA . 939 parts In-Stock

1+ parts

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939

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Overview

Unlock unparalleled performance with the STTA106RL rectifier diode from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for reliability and efficiency, this single-package diode excels in demanding applications, handling high voltages and temperatures with ease. Experience superior reverse recovery times and robust power capabilities that enhance your designs, ultimately delivering dependable outputs to elevate your projects and ensure peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The robust plastic/epoxy body material ensures durability and resistance to environmental factors, making this diode suitable for various applications.

Config: SINGLE

The single configuration provides simplicity in integration with circuits, making it easy to use in designs.

Maximum Reverse Recovery Time: 0.05 us

A low reverse recovery time enhances switching efficiency, which is critical for high-frequency applications.

Package Shape: ROUND

The round package shape allows for compact designs, making it versatile for fitment in smaller circuit boards.

Number of Terminals: 2

With only two terminals, the diode simplifies connections, reducing potential installation errors.

Package Style (Meter): LONG FORM

The long-form style provides sufficient lead length for easier soldering and better layout flexibility on PCB.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this diode to function reliably in demanding thermal environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish improves solderability and resistance to oxidation, ensuring long-lasting connections.

Terminal Position: AXIAL

An axial terminal position allows for easy mounting and contributes to a straightforward PCB population process.

Case Connection: ISOLATED

Isolated case connection ensures safe operation and minimizes the risk of short circuits in circuit designs.

Maximum Power Dissipation: 1.5 W

A maximum power dissipation of 1.5 W allows for efficient handling of power, making the diode suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

This rectifier diode is designed specifically for converting AC to DC, making it ideal for power supply circuits.

Maximum Forward Voltage (VF): 1.75 V

A low forward voltage drop ensures efficient energy conversion, which enhances overall circuit performance.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can cater to various low-to-medium power applications.

Terminal Form: WIRE

The wire terminal form allows for flexible installation options, accommodating various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 600 V

A high peak reverse voltage rating ensures reliable operation in high-voltage environments, making this diode a robust choice.

Maximum Non-Repetitive Peak Forward Current: 25 A

The ability to withstand high non-repetitive forward currents makes this diode suitable for applications with surge requirements.

Diode Element Material: SILICON

Silicon as a diode element material contributes to high efficiency and ensures stable performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers STTA106RL attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

DO-15

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

25 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

1.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STTA106RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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